Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

M. Watanabe, N. Shigyo, T. Hoshii, K. Furukawa, K. Kakushima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, I. Muneta, H. Wakabayashi, A. Nakajima, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the J_{C}^{-}}V_{\text{CE} characteristics obtained by 3D- TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.

Original languageEnglish
Title of host publication2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728181769
DOIs
Publication statusPublished - Apr 8 2021
Event5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China
Duration: Apr 8 2021Apr 11 2021

Publication series

Name2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/TerritoryChina
CityChengdu
Period4/8/214/11/21

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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