Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer

H. Okamoto, K. Yamamoto, D. Wang, H. Nakashima

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	643-644
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2016.o-6-04l
Publication status	Published - Sept 29 2016
Event	2016 International Conference on Solid State Devices and Materials (SSDM2016) - Tsukuba International Congress Center, Tsukuba, Japan Duration: Sept 26 2016 → Sept 29 2016

Conference	2016 International Conference on Solid State Devices and Materials (SSDM2016)
Country/Territory	Japan
City	Tsukuba
Period	9/26/16 → 9/29/16

Access to Document

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title = "Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer",

author = "H. Okamoto and K. Yamamoto and D. Wang and H. Nakashima",

year = "2016",

month = sep,

day = "29",

doi = "10.7567/ssdm.2016.o-6-04l",

language = "English",

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note = "2016 International Conference on Solid State Devices and Materials (SSDM2016) ; Conference date: 26-09-2016 Through 29-09-2016",

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TY - CONF

T1 - Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer

AU - Okamoto, H.

AU - Yamamoto, K.

AU - Wang, D.

AU - Nakashima, H.

PY - 2016/9/29

Y1 - 2016/9/29

U2 - 10.7567/ssdm.2016.o-6-04l

DO - 10.7567/ssdm.2016.o-6-04l

M3 - Paper

SP - 643

EP - 644

T2 - 2016 International Conference on Solid State Devices and Materials (SSDM2016)

Y2 - 26 September 2016 through 29 September 2016

ER -