Achievement of ultralow contact resistivity of metal/n+-ge contacts with Zr-N-Ge amorphous interlayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A bottleneck for achieving Gc-CMOS is the Fermi-level pinning (FLP) phenomenon, which causes high electron barrier height (Obn) for metal/Ge contacts, resulting in an increase in contact resistivity (ρc) between metal and n+-source/drain for n-MOSFET. We have found that the low Φbn can be realized by directly sputtered TiN/Ge and ZrN/Ge contacts, which is induced by amorphous interlayer (a-IL) formed during the sputter deposition. In this paper, we present that the a-IL in the ZrN/Ge contact can be retained on Ge surface, which enables us to fabricate metal/a-IL/Ge contacts with different metals. We investigated the electrical properties of metal/a-IL/Gc and metal/a-IL/n+-Ge contacts and showed that the a-IL remarkably modulate the Φbn and ρc. As a result, we succeeded in ultralow ρc for Ag/a-IL/n+-Ge with post metallization annealing at 400°C, which was an average ρc value of 2×10-7 ω·cm2

Original languageEnglish
Title of host publicationECS Transactions
EditorsK. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, M. Tao
PublisherElectrochemical Society Inc.
Pages97-106
Number of pages10
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2017
Event10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

NameECS Transactions
Number4
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/1/1710/5/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Nakashima, H., Okamoto, H., Yamamoto, K., & Wang, D. (2017). Achievement of ultralow contact resistivity of metal/n+-ge contacts with Zr-N-Ge amorphous interlayer. In K. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, & M. Tao (Eds.), ECS Transactions (4 ed., pp. 97-106). (ECS Transactions; Vol. 80, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/08004.0097ecst