Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A bottleneck for achieving Gc-CMOS is the Fermi-level pinning (FLP) phenomenon, which causes high electron barrier height (Obn) for metal/Ge contacts, resulting in an increase in contact resistivity (ρ c ) between metal and n + -source/drain for n-MOSFET. We have found that the low Φ bn can be realized by directly sputtered TiN/Ge and ZrN/Ge contacts, which is induced by amorphous interlayer (a-IL) formed during the sputter deposition. In this paper, we present that the a-IL in the ZrN/Ge contact can be retained on Ge surface, which enables us to fabricate metal/a-IL/Ge contacts with different metals. We investigated the electrical properties of metal/a-IL/Gc and metal/a-IL/n + -Ge contacts and showed that the a-IL remarkably modulate the Φ bn and ρ c . As a result, we succeeded in ultralow ρ c for Ag/a-IL/n + -Ge with post metallization annealing at 400°C, which was an average ρ c value of 2×10 -7 ω·cm 2

Original languageEnglish
Title of host publicationECS Transactions
EditorsK. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, M. Tao
PublisherElectrochemical Society Inc.
Pages97-106
Number of pages10
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2017
Event10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

NameECS Transactions
Number4
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/1/1710/5/17

Fingerprint

Metals
Sputter deposition
Metallizing
Fermi level
Electric properties
Annealing
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Nakashima, H., Okamoto, H., Yamamoto, K., & Wang, D. (2017). Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer In K. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, ... M. Tao (Eds.), ECS Transactions (4 ed., pp. 97-106). (ECS Transactions; Vol. 80, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/08004.0097ecst

Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer . / Nakashima, Hiroshi; Okamoto, Hayalo; Yamamoto, Keisuke; Wang, Dong.

ECS Transactions. ed. / K. Shiojima; A. Mai; J. Murota; P. Chin; C. L. Claeys; H. Iwai; S. Deleonibus; M. Tao. 4. ed. Electrochemical Society Inc., 2017. p. 97-106 (ECS Transactions; Vol. 80, No. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakashima, H, Okamoto, H, Yamamoto, K & Wang, D 2017, Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer in K Shiojima, A Mai, J Murota, P Chin, CL Claeys, H Iwai, S Deleonibus & M Tao (eds), ECS Transactions. 4 edn, ECS Transactions, no. 4, vol. 80, Electrochemical Society Inc., pp. 97-106, 10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting, National Harbor, United States, 10/1/17. https://doi.org/10.1149/08004.0097ecst
Nakashima H, Okamoto H, Yamamoto K, Wang D. Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer In Shiojima K, Mai A, Murota J, Chin P, Claeys CL, Iwai H, Deleonibus S, Tao M, editors, ECS Transactions. 4 ed. Electrochemical Society Inc. 2017. p. 97-106. (ECS Transactions; 4). https://doi.org/10.1149/08004.0097ecst
Nakashima, Hiroshi ; Okamoto, Hayalo ; Yamamoto, Keisuke ; Wang, Dong. / Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer ECS Transactions. editor / K. Shiojima ; A. Mai ; J. Murota ; P. Chin ; C. L. Claeys ; H. Iwai ; S. Deleonibus ; M. Tao. 4. ed. Electrochemical Society Inc., 2017. pp. 97-106 (ECS Transactions; 4).
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