Activated slip systems in β-silicon nitride during high temperature deformation

Kouichi Kawahara, Sadahiro Tsurekawa, Hideharu Nakashima

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Abstract

In order to clarify the activated slip systems of β-silicon nitride (Si3N4) during high temperature deformation, we have studied the dislocation structures in hot-pressed β-Si3N4 deformed at temperatures from 1820 to 2020 K with strain rates from 9×10-6 to 2×10-4 s-1. Analysis of the dislocations by transmission electron microscopy revealed that the most of dislocations in β-Si3N4 plasticaly deformed at high temperatures were c dislocations which were mobile on the {1010} as a primary slip plane. Moreover, a dislocations on the {1010} slip plane were also found to be mobile. The density of a dislocations to that of c dislocations was roughly estimated to be the ratio of 1 : 10, irrespective of the deformation condition. In addition, (a+c) dislocations gliding on the {1121} pyramidal plane were seen to be activated only under the limited deformation conditions at which β-Si3N4 showed a fairly good ductility without crack formation. The density of (a+c) dislocations was about two orders of magnitude lower than that of c dislocations.

Original languageEnglish
Pages (from-to)582-588
Number of pages7
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume60
Issue number6
DOIs
Publication statusPublished - Jan 1 1996

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

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