Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment

Akimasa Kinoshita, Kenji Suzuki, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shin Ichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

Research output: Contribution to journalArticle

Abstract

Rapid thermal annealing (RTA) on areas with diameters as large as 2 in. at high temperatures using hybrid super-RTA (HSRTA) equipment is performed in this study. The HS-RTA equipment consists of an infrared annealing unit and an RF induction annealing unit for uniform annealing over a 2-in.-φ susceptor. As a result of annealing using the HS-RTA equipment, temperature is elevated from RT to a high temperature (1600-1800°C) for less than 1 min. Using aluminum (Al)-implanted silicon carbide (SiC) samples, the performance of the HS-RTA equipment is evaluated. For Al-implanted samples annealed at 1700°C, the sheet resistance distribution on the 2-in.-φ susceptor is 8.0%.

Original languageEnglish
Pages (from-to)5342-5344
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number8 A
DOIs
Publication statusPublished - Aug 6 2007
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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