Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment

Akimasa Kinoshita; Kenji Suzuki; Junji Senzaki; Makoto Katou; Shinsuke Harada; Mitsuo Okamato; Shin Ichi Nishizawa; Kenji Fukuda; Fukuyoshi Morigasa; Tomoyoshi Endou; Takuo Isii; Teruyuki Yashima

doi:10.1143/JJAP.46.5342

Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment

Akimasa Kinoshita, Kenji Suzuki, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shin Ichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

Research output: Contribution to journal › Article

Abstract

Rapid thermal annealing (RTA) on areas with diameters as large as 2 in. at high temperatures using hybrid super-RTA (HSRTA) equipment is performed in this study. The HS-RTA equipment consists of an infrared annealing unit and an RF induction annealing unit for uniform annealing over a 2-in.-φ susceptor. As a result of annealing using the HS-RTA equipment, temperature is elevated from RT to a high temperature (1600-1800°C) for less than 1 min. Using aluminum (Al)-implanted silicon carbide (SiC) samples, the performance of the HS-RTA equipment is evaluated. For Al-implanted samples annealed at 1700°C, the sheet resistance distribution on the 2-in.-φ susceptor is 8.0%.

Original language	English
Pages (from-to)	5342-5344
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.46.5342
Publication status	Published - Aug 6 2007
Externally published	Yes

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Kinoshita, A., Suzuki, K., Senzaki, J., Katou, M., Harada, S., Okamato, M., ... Yashima, T. (2007). Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(8 A), 5342-5344. https://doi.org/10.1143/JJAP.46.5342

Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment. / Kinoshita, Akimasa; Suzuki, Kenji; Senzaki, Junji; Katou, Makoto; Harada, Shinsuke; Okamato, Mitsuo; Nishizawa, Shin Ichi; Fukuda, Kenji; Morigasa, Fukuyoshi; Endou, Tomoyoshi; Isii, Takuo; Yashima, Teruyuki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 8 A, 06.08.2007, p. 5342-5344.

Research output: Contribution to journal › Article

Kinoshita, A, Suzuki, K, Senzaki, J, Katou, M, Harada, S, Okamato, M, Nishizawa, SI, Fukuda, K, Morigasa, F, Endou, T, Isii, T & Yashima, T 2007, 'Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 46, no. 8 A, pp. 5342-5344. https://doi.org/10.1143/JJAP.46.5342

Kinoshita, Akimasa ; Suzuki, Kenji ; Senzaki, Junji ; Katou, Makoto ; Harada, Shinsuke ; Okamato, Mitsuo ; Nishizawa, Shin Ichi ; Fukuda, Kenji ; Morigasa, Fukuyoshi ; Endou, Tomoyoshi ; Isii, Takuo ; Yashima, Teruyuki. / Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 8 A. pp. 5342-5344.

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abstract = "Rapid thermal annealing (RTA) on areas with diameters as large as 2 in. at high temperatures using hybrid super-RTA (HSRTA) equipment is performed in this study. The HS-RTA equipment consists of an infrared annealing unit and an RF induction annealing unit for uniform annealing over a 2-in.-φ susceptor. As a result of annealing using the HS-RTA equipment, temperature is elevated from RT to a high temperature (1600-1800°C) for less than 1 min. Using aluminum (Al)-implanted silicon carbide (SiC) samples, the performance of the HS-RTA equipment is evaluated. For Al-implanted samples annealed at 1700°C, the sheet resistance distribution on the 2-in.-φ susceptor is 8.0{\%}.",

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AU - Okamato, Mitsuo

AU - Nishizawa, Shin Ichi

AU - Fukuda, Kenji

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Access to Document

10.1143/JJAP.46.5342