Rapid thermal annealing (RTA) on areas with diameters as large as 2 in. at high temperatures using hybrid super-RTA (HSRTA) equipment is performed in this study. The HS-RTA equipment consists of an infrared annealing unit and an RF induction annealing unit for uniform annealing over a 2-in.-φ susceptor. As a result of annealing using the HS-RTA equipment, temperature is elevated from RT to a high temperature (1600-1800°C) for less than 1 min. Using aluminum (Al)-implanted silicon carbide (SiC) samples, the performance of the HS-RTA equipment is evaluated. For Al-implanted samples annealed at 1700°C, the sheet resistance distribution on the 2-in.-φ susceptor is 8.0%.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||8 A|
|Publication status||Published - Aug 6 2007|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)