Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment

Akimasa Kinoshita; Kenji Suzuki; Junji Senzaki; Makoto Katou; Shinsuke Harada; Mitsuo Okamato; Shin Ichi Nishizawa; Kenji Fukuda; Fukuyoshi Morigasa; Tomoyoshi Endou; Takuo Isii; Teruyuki Yashima

doi:10.1143/JJAP.46.5342

Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment

Akimasa Kinoshita, Kenji Suzuki, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shin Ichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

Research output: Contribution to journal › Article › peer-review

Abstract

Rapid thermal annealing (RTA) on areas with diameters as large as 2 in. at high temperatures using hybrid super-RTA (HSRTA) equipment is performed in this study. The HS-RTA equipment consists of an infrared annealing unit and an RF induction annealing unit for uniform annealing over a 2-in.-φ susceptor. As a result of annealing using the HS-RTA equipment, temperature is elevated from RT to a high temperature (1600-1800°C) for less than 1 min. Using aluminum (Al)-implanted silicon carbide (SiC) samples, the performance of the HS-RTA equipment is evaluated. For Al-implanted samples annealed at 1700°C, the sheet resistance distribution on the 2-in.-φ susceptor is 8.0%.

Original language	English
Pages (from-to)	5342-5344
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.46.5342
Publication status	Published - Aug 6 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.46.5342

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Kinoshita, A., Suzuki, K., Senzaki, J., Katou, M., Harada, S., Okamato, M., Nishizawa, S. I., Fukuda, K., Morigasa, F., Endou, T., Isii, T., & Yashima, T. (2007). Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(8 A), 5342-5344. https://doi.org/10.1143/JJAP.46.5342

Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment. / Kinoshita, Akimasa; Suzuki, Kenji; Senzaki, Junji; Katou, Makoto; Harada, Shinsuke; Okamato, Mitsuo; Nishizawa, Shin Ichi; Fukuda, Kenji; Morigasa, Fukuyoshi; Endou, Tomoyoshi; Isii, Takuo; Yashima, Teruyuki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 8 A, 06.08.2007, p. 5342-5344.

Research output: Contribution to journal › Article › peer-review

Kinoshita, A, Suzuki, K, Senzaki, J, Katou, M, Harada, S, Okamato, M, Nishizawa, SI, Fukuda, K, Morigasa, F, Endou, T, Isii, T & Yashima, T 2007, 'Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 46, no. 8 A, pp. 5342-5344. https://doi.org/10.1143/JJAP.46.5342

Kinoshita, Akimasa ; Suzuki, Kenji ; Senzaki, Junji ; Katou, Makoto ; Harada, Shinsuke ; Okamato, Mitsuo ; Nishizawa, Shin Ichi ; Fukuda, Kenji ; Morigasa, Fukuyoshi ; Endou, Tomoyoshi ; Isii, Takuo ; Yashima, Teruyuki. / Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 8 A. pp. 5342-5344.

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title = "Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment",

abstract = "Rapid thermal annealing (RTA) on areas with diameters as large as 2 in. at high temperatures using hybrid super-RTA (HSRTA) equipment is performed in this study. The HS-RTA equipment consists of an infrared annealing unit and an RF induction annealing unit for uniform annealing over a 2-in.-φ susceptor. As a result of annealing using the HS-RTA equipment, temperature is elevated from RT to a high temperature (1600-1800°C) for less than 1 min. Using aluminum (Al)-implanted silicon carbide (SiC) samples, the performance of the HS-RTA equipment is evaluated. For Al-implanted samples annealed at 1700°C, the sheet resistance distribution on the 2-in.-φ susceptor is 8.0%.",

author = "Akimasa Kinoshita and Kenji Suzuki and Junji Senzaki and Makoto Katou and Shinsuke Harada and Mitsuo Okamato and Nishizawa, {Shin Ichi} and Kenji Fukuda and Fukuyoshi Morigasa and Tomoyoshi Endou and Takuo Isii and Teruyuki Yashima",

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AU - Kinoshita, Akimasa

AU - Suzuki, Kenji

AU - Senzaki, Junji

AU - Katou, Makoto

AU - Harada, Shinsuke

AU - Okamato, Mitsuo

AU - Nishizawa, Shin Ichi

AU - Fukuda, Kenji

AU - Morigasa, Fukuyoshi

AU - Endou, Tomoyoshi

AU - Isii, Takuo

AU - Yashima, Teruyuki

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AB - Rapid thermal annealing (RTA) on areas with diameters as large as 2 in. at high temperatures using hybrid super-RTA (HSRTA) equipment is performed in this study. The HS-RTA equipment consists of an infrared annealing unit and an RF induction annealing unit for uniform annealing over a 2-in.-φ susceptor. As a result of annealing using the HS-RTA equipment, temperature is elevated from RT to a high temperature (1600-1800°C) for less than 1 min. Using aluminum (Al)-implanted silicon carbide (SiC) samples, the performance of the HS-RTA equipment is evaluated. For Al-implanted samples annealed at 1700°C, the sheet resistance distribution on the 2-in.-φ susceptor is 8.0%.

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Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment

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