Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment

Akimasa Kinoshita, Kenji Suzuki, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shin Ichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

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