Activation treatment of ion implanted dopants using hybrid super RTA equipment

Akimasa Kinoshita, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shin Ichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (∼1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/□, 82.6Ω/□ and 75.50/□, respectively. The sheet resistance uniformities are 9.9%, 7.9% and 9.3%. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
Pages803-806
Number of pages4
EditionPART 2
Publication statusPublished - Dec 1 2006
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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