Activation treatment of ion implanted dopants using hybrid super RTA equipment

Akimasa Kinoshita, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shinichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (∼1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/□, 82.6Ω/□ and 75.50/□, respectively. The sheet resistance uniformities are 9.9%, 7.9% and 9.3%. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
Pages803-806
Number of pages4
EditionPART 2
Publication statusPublished - Dec 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Rapid thermal annealing
Chemical activation
Doping (additives)
Ions
Annealing
Sheet resistance
Temperature
Silicon carbide
Phosphorus
Atomic force microscopy
Temperature distribution
Surface roughness
Infrared radiation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kinoshita, A., Senzaki, J., Katou, M., Harada, S., Okamato, M., Nishizawa, S., ... Yashima, T. (2006). Activation treatment of ion implanted dopants using hybrid super RTA equipment. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., pp. 803-806). (Materials Science Forum; Vol. 527-529, No. PART 2).

Activation treatment of ion implanted dopants using hybrid super RTA equipment. / Kinoshita, Akimasa; Senzaki, Junji; Katou, Makoto; Harada, Shinsuke; Okamato, Mitsuo; Nishizawa, Shinichi; Fukuda, Kenji; Morigasa, Fukuyoshi; Endou, Tomoyoshi; Isii, Takuo; Yashima, Teruyuki.

Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. ed. 2006. p. 803-806 (Materials Science Forum; Vol. 527-529, No. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kinoshita, A, Senzaki, J, Katou, M, Harada, S, Okamato, M, Nishizawa, S, Fukuda, K, Morigasa, F, Endou, T, Isii, T & Yashima, T 2006, Activation treatment of ion implanted dopants using hybrid super RTA equipment. in Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 edn, Materials Science Forum, no. PART 2, vol. 527-529, pp. 803-806, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.
Kinoshita A, Senzaki J, Katou M, Harada S, Okamato M, Nishizawa S et al. Activation treatment of ion implanted dopants using hybrid super RTA equipment. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. 2006. p. 803-806. (Materials Science Forum; PART 2).
Kinoshita, Akimasa ; Senzaki, Junji ; Katou, Makoto ; Harada, Shinsuke ; Okamato, Mitsuo ; Nishizawa, Shinichi ; Fukuda, Kenji ; Morigasa, Fukuyoshi ; Endou, Tomoyoshi ; Isii, Takuo ; Yashima, Teruyuki. / Activation treatment of ion implanted dopants using hybrid super RTA equipment. Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. ed. 2006. pp. 803-806 (Materials Science Forum; PART 2).
@inproceedings{4e9450a673954e7e9523a7b04c2b8bbb,
title = "Activation treatment of ion implanted dopants using hybrid super RTA equipment",
abstract = "We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (∼1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/□, 82.6Ω/□ and 75.50/□, respectively. The sheet resistance uniformities are 9.9{\%}, 7.9{\%} and 9.3{\%}. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.",
author = "Akimasa Kinoshita and Junji Senzaki and Makoto Katou and Shinsuke Harada and Mitsuo Okamato and Shinichi Nishizawa and Kenji Fukuda and Fukuyoshi Morigasa and Tomoyoshi Endou and Takuo Isii and Teruyuki Yashima",
year = "2006",
month = "12",
day = "1",
language = "English",
isbn = "9780878494255",
series = "Materials Science Forum",
number = "PART 2",
pages = "803--806",
booktitle = "Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005",
edition = "PART 2",

}

TY - GEN

T1 - Activation treatment of ion implanted dopants using hybrid super RTA equipment

AU - Kinoshita, Akimasa

AU - Senzaki, Junji

AU - Katou, Makoto

AU - Harada, Shinsuke

AU - Okamato, Mitsuo

AU - Nishizawa, Shinichi

AU - Fukuda, Kenji

AU - Morigasa, Fukuyoshi

AU - Endou, Tomoyoshi

AU - Isii, Takuo

AU - Yashima, Teruyuki

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (∼1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/□, 82.6Ω/□ and 75.50/□, respectively. The sheet resistance uniformities are 9.9%, 7.9% and 9.3%. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.

AB - We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (∼1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/□, 82.6Ω/□ and 75.50/□, respectively. The sheet resistance uniformities are 9.9%, 7.9% and 9.3%. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.

UR - http://www.scopus.com/inward/record.url?scp=37849024078&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37849024078&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:37849024078

SN - 9780878494255

T3 - Materials Science Forum

SP - 803

EP - 806

BT - Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005

ER -