Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper investigates an active gate driver for a large capacity multi-chip SiC-MOSFET power module. The active gate driver utilizes the reactive voltage of the source wire inductance as the negative feedback signal of the gate voltage. In addition, the feedback stabilization design is included in the circuit. The switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 800 V / 300 A. This paper describes the construction of the active gate driver circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.

Original languageEnglish
Title of host publicationProceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1350-1353
Number of pages4
ISBN (Electronic)9781728163444
DOIs
Publication statusPublished - May 24 2021
Event12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 - Virtual, Singapore, Singapore
Duration: May 24 2021May 27 2021

Publication series

NameProceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021

Conference

Conference12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
Country/TerritorySingapore
CityVirtual, Singapore
Period5/24/215/27/21

All Science Journal Classification (ASJC) codes

  • Control and Optimization
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Mechanical Engineering

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