Addition of PEG-thiol to Cu electroless plating bath for realizing perfect conformal deposition in through-Si via holes for 3-D integration

F. Inoue, T. Yokoyama, S. Tanaka, K. Yamamoto, S. Shingubara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Cu electroless plating is one of the most promising methods to form a seed layer in TSV filling by Cu electroplating for 3-D integration. However, for increasing aspect ratios of TSVs, the uniformity of the Cu thickness at the sidewall of TSVs becomes poorer due to consumption of Cu ions and reducing agents near the entrance of TSVs. In this study, we have studied the addition of PEG-thiol to an electroless Cu plating bath with a reducing agent of glyoxylic acid. With this method we achieved near-conformal deposition of Cu for TSVs with diameters of 4 and 10 μm and 40 μm depth. The Cu thickness of the TSV sidewall remained constant with depth even for the high aspect ratio TSVs. This method is very effective for a formation of a thin Cu seed layer prior to the Cu electroplating process of TSV-filling.

Original languageEnglish
Title of host publicationProcessing, Materials, and Integration of Damascene and 3D Interconnects
Pages31-36
Number of pages6
Edition38
DOIs
Publication statusPublished - Dec 1 2010
Externally publishedYes
EventProcessing, Materials and Integration of Damascene and 3D Interconnects - 216th ECS Meeting - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Publication series

NameECS Transactions
Number38
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherProcessing, Materials and Integration of Damascene and 3D Interconnects - 216th ECS Meeting
CountryAustria
CityVienna
Period10/4/0910/9/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Inoue, F., Yokoyama, T., Tanaka, S., Yamamoto, K., & Shingubara, S. (2010). Addition of PEG-thiol to Cu electroless plating bath for realizing perfect conformal deposition in through-Si via holes for 3-D integration. In Processing, Materials, and Integration of Damascene and 3D Interconnects (38 ed., pp. 31-36). (ECS Transactions; Vol. 25, No. 38). https://doi.org/10.1149/1.3390655