TY - GEN
T1 - Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device
AU - Takamori, Taro
AU - Wada, Keiji
AU - Boettcher, Norman
AU - Erlbacher, Tobias
AU - Saito, Wataru
AU - Nishizawa, Shinichi
N1 - Funding Information:
This paper is based on the results obtained from a project supported by a research grant from the Support for Pioneering Research Initiated by the Next Generation from the Japan Science and Technology Agency (JST SPRING) under Grant Number JPMJSP2156.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This paper proposes a current limit feature for a multi-functional SiC circuit breaker device with a “dual thyristor” structure. The proposed feature provides the device not only with a fast-response current breaking operation but also with the current limiting function, including supplying a constant current to the load and preventing the detection of inrush currents. The proposed feature is suitable for replacing mechanical circuit breakers in initial charging circuits for the rectifiers and a safety equivalent in case of overcurrent accidents. The proposed method achieves various constant currents by simply varying the gate-drive circuit with adjustable parameters of an additional MOSFET. Experimental results verified that the device with the current limit feature reduces the inrush current to up to 22.6% of capacitive load condition using a 500 VDC circuit system.
AB - This paper proposes a current limit feature for a multi-functional SiC circuit breaker device with a “dual thyristor” structure. The proposed feature provides the device not only with a fast-response current breaking operation but also with the current limiting function, including supplying a constant current to the load and preventing the detection of inrush currents. The proposed feature is suitable for replacing mechanical circuit breakers in initial charging circuits for the rectifiers and a safety equivalent in case of overcurrent accidents. The proposed method achieves various constant currents by simply varying the gate-drive circuit with adjustable parameters of an additional MOSFET. Experimental results verified that the device with the current limit feature reduces the inrush current to up to 22.6% of capacitive load condition using a 500 VDC circuit system.
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U2 - 10.1109/ECCE50734.2022.9948054
DO - 10.1109/ECCE50734.2022.9948054
M3 - Conference contribution
AN - SCOPUS:85144087720
T3 - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
BT - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Y2 - 9 October 2022 through 13 October 2022
ER -
