Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy

Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and (0001) by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.

Original languageEnglish
Article number125601
JournalApplied Physics Express
Volume9
Issue number12
DOIs
Publication statusPublished - Dec 1 2016

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Metallorganic vapor phase epitaxy
Surface reconstruction
Epitaxial growth
vapor phase epitaxy
Crystal orientation
epitaxy
Semiconductor materials
Surface states
Growth temperature
Interfacial energy
surface energy
Thermodynamics
thermodynamics

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Advances in modeling semiconductor epitaxy : Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy. / Kusaba, Akira; Kangawa, Yoshihiro; Kempisty, Pawel; Shiraishi, Kenji; Kakimoto, Koichi; Koukitu, Akinori.

In: Applied Physics Express, Vol. 9, No. 12, 125601, 01.12.2016.

Research output: Contribution to journalArticle

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