Abstract
We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and (0001) by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.
| Original language | English |
|---|---|
| Article number | 125601 |
| Journal | Applied Physics Express |
| Volume | 9 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 1 2016 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Advances in modeling semiconductor epitaxy : Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy. / Kusaba, Akira; Kangawa, Yoshihiro; Kempisty, Pawel; Shiraishi, Kenji; Kakimoto, Koichi; Koukitu, Akinori.
In: Applied Physics Express, Vol. 9, No. 12, 125601, 01.12.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Advances in modeling semiconductor epitaxy
T2 - Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
AU - Kusaba, Akira
AU - Kangawa, Yoshihiro
AU - Kempisty, Pawel
AU - Shiraishi, Kenji
AU - Kakimoto, Koichi
AU - Koukitu, Akinori
PY - 2016/12/1
Y1 - 2016/12/1
N2 - We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and (0001) by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.
AB - We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and (0001) by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.
UR - http://www.scopus.com/inward/record.url?scp=84995783608&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84995783608&partnerID=8YFLogxK
U2 - 10.7567/APEX.9.125601
DO - 10.7567/APEX.9.125601
M3 - Article
AN - SCOPUS:84995783608
VL - 9
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 12
M1 - 125601
ER -