TY - JOUR
T1 - Advances in modeling semiconductor epitaxy
T2 - Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
AU - Kusaba, Akira
AU - Kangawa, Yoshihiro
AU - Kempisty, Pawel Tomasz
AU - Shiraishi, Kenji
AU - Kakimoto, Koichi
AU - Koukitu, Akinori
N1 - Funding Information:
One of the authors (AK) is supported by a Grant-in-Aid for JSPS Research Fellow (No. JP16J04128). This research is partially supported by the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT), through its "Program for research and development of next-generation semiconductor to realize energy-saving society", and JSPS KAKENHI Grant Number JP16H06418.
Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/12
Y1 - 2016/12
N2 - We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and (0001) by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.
AB - We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and (0001) by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.
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U2 - 10.7567/APEX.9.125601
DO - 10.7567/APEX.9.125601
M3 - Article
AN - SCOPUS:84995783608
SN - 1882-0778
VL - 9
JO - Applied Physics Express
JF - Applied Physics Express
IS - 12
M1 - 125601
ER -