Advantage in solar cell efficiency of high-quality seed cast mono Si ingot

Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Satoshi Nakano, Bing Gao, Koichi Kakimoto, Kyotaro Nakamura, Yoshio Ohshita, Atsushi Ogura, Shin Sugawara, Takashi Sekiguchi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have grown 50 cm2 mono Si ingots by the seed cast technique. The carbon and oxygen concentrations of the ingots have been significantly reduced by improving the gas flow condition and coating. The dislocation density was also reduced by eliminating the extra dislocation generation sources. Owing to these developments, the lifetime of wafers has reached 465 μs. Finally, the efficiency of 18.7% has been achieved, which is comparable to 18.9% of the reference Czochralski (CZ) Si wafer.

Original languageEnglish
Article number062301
JournalApplied Physics Express
Volume8
Issue number6
DOIs
Publication statusPublished - Jun 1 2015

Fingerprint

Monocrystalline silicon
ingots
Ingots
Seed
casts
seeds
Solar cells
solar cells
wafers
gas flow
Flow of gases
coatings
life (durability)
Coatings
Carbon
Oxygen
carbon
oxygen

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Miyamura, Y., Harada, H., Jiptner, K., Nakano, S., Gao, B., Kakimoto, K., ... Sekiguchi, T. (2015). Advantage in solar cell efficiency of high-quality seed cast mono Si ingot. Applied Physics Express, 8(6), [062301]. https://doi.org/10.7567/APEX.8.062301

Advantage in solar cell efficiency of high-quality seed cast mono Si ingot. / Miyamura, Yoshiji; Harada, Hirofumi; Jiptner, Karolin; Nakano, Satoshi; Gao, Bing; Kakimoto, Koichi; Nakamura, Kyotaro; Ohshita, Yoshio; Ogura, Atsushi; Sugawara, Shin; Sekiguchi, Takashi.

In: Applied Physics Express, Vol. 8, No. 6, 062301, 01.06.2015.

Research output: Contribution to journalArticle

Miyamura, Y, Harada, H, Jiptner, K, Nakano, S, Gao, B, Kakimoto, K, Nakamura, K, Ohshita, Y, Ogura, A, Sugawara, S & Sekiguchi, T 2015, 'Advantage in solar cell efficiency of high-quality seed cast mono Si ingot', Applied Physics Express, vol. 8, no. 6, 062301. https://doi.org/10.7567/APEX.8.062301
Miyamura, Yoshiji ; Harada, Hirofumi ; Jiptner, Karolin ; Nakano, Satoshi ; Gao, Bing ; Kakimoto, Koichi ; Nakamura, Kyotaro ; Ohshita, Yoshio ; Ogura, Atsushi ; Sugawara, Shin ; Sekiguchi, Takashi. / Advantage in solar cell efficiency of high-quality seed cast mono Si ingot. In: Applied Physics Express. 2015 ; Vol. 8, No. 6.
@article{f473b0fc5fda4f9bb99e7e199acf0dfb,
title = "Advantage in solar cell efficiency of high-quality seed cast mono Si ingot",
abstract = "We have grown 50 cm2 mono Si ingots by the seed cast technique. The carbon and oxygen concentrations of the ingots have been significantly reduced by improving the gas flow condition and coating. The dislocation density was also reduced by eliminating the extra dislocation generation sources. Owing to these developments, the lifetime of wafers has reached 465 μs. Finally, the efficiency of 18.7{\%} has been achieved, which is comparable to 18.9{\%} of the reference Czochralski (CZ) Si wafer.",
author = "Yoshiji Miyamura and Hirofumi Harada and Karolin Jiptner and Satoshi Nakano and Bing Gao and Koichi Kakimoto and Kyotaro Nakamura and Yoshio Ohshita and Atsushi Ogura and Shin Sugawara and Takashi Sekiguchi",
year = "2015",
month = "6",
day = "1",
doi = "10.7567/APEX.8.062301",
language = "English",
volume = "8",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "6",

}

TY - JOUR

T1 - Advantage in solar cell efficiency of high-quality seed cast mono Si ingot

AU - Miyamura, Yoshiji

AU - Harada, Hirofumi

AU - Jiptner, Karolin

AU - Nakano, Satoshi

AU - Gao, Bing

AU - Kakimoto, Koichi

AU - Nakamura, Kyotaro

AU - Ohshita, Yoshio

AU - Ogura, Atsushi

AU - Sugawara, Shin

AU - Sekiguchi, Takashi

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We have grown 50 cm2 mono Si ingots by the seed cast technique. The carbon and oxygen concentrations of the ingots have been significantly reduced by improving the gas flow condition and coating. The dislocation density was also reduced by eliminating the extra dislocation generation sources. Owing to these developments, the lifetime of wafers has reached 465 μs. Finally, the efficiency of 18.7% has been achieved, which is comparable to 18.9% of the reference Czochralski (CZ) Si wafer.

AB - We have grown 50 cm2 mono Si ingots by the seed cast technique. The carbon and oxygen concentrations of the ingots have been significantly reduced by improving the gas flow condition and coating. The dislocation density was also reduced by eliminating the extra dislocation generation sources. Owing to these developments, the lifetime of wafers has reached 465 μs. Finally, the efficiency of 18.7% has been achieved, which is comparable to 18.9% of the reference Czochralski (CZ) Si wafer.

UR - http://www.scopus.com/inward/record.url?scp=84930714994&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930714994&partnerID=8YFLogxK

U2 - 10.7567/APEX.8.062301

DO - 10.7567/APEX.8.062301

M3 - Article

AN - SCOPUS:84930714994

VL - 8

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 6

M1 - 062301

ER -