TY - JOUR
T1 - Advantage in solar cell efficiency of high-quality seed cast mono Si ingot
AU - Miyamura, Yoshiji
AU - Harada, Hirofumi
AU - Jiptner, Karolin
AU - Nakano, Satoshi
AU - Gao, Bing
AU - Kakimoto, Koichi
AU - Nakamura, Kyotaro
AU - Ohshita, Yoshio
AU - Ogura, Atsushi
AU - Sugawara, Shin
AU - Sekiguchi, Takashi
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - We have grown 50 cm2 mono Si ingots by the seed cast technique. The carbon and oxygen concentrations of the ingots have been significantly reduced by improving the gas flow condition and coating. The dislocation density was also reduced by eliminating the extra dislocation generation sources. Owing to these developments, the lifetime of wafers has reached 465 μs. Finally, the efficiency of 18.7% has been achieved, which is comparable to 18.9% of the reference Czochralski (CZ) Si wafer.
AB - We have grown 50 cm2 mono Si ingots by the seed cast technique. The carbon and oxygen concentrations of the ingots have been significantly reduced by improving the gas flow condition and coating. The dislocation density was also reduced by eliminating the extra dislocation generation sources. Owing to these developments, the lifetime of wafers has reached 465 μs. Finally, the efficiency of 18.7% has been achieved, which is comparable to 18.9% of the reference Czochralski (CZ) Si wafer.
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U2 - 10.7567/APEX.8.062301
DO - 10.7567/APEX.8.062301
M3 - Article
AN - SCOPUS:84930714994
SN - 1882-0778
VL - 8
JO - Applied Physics Express
JF - Applied Physics Express
IS - 6
M1 - 062301
ER -