Advantage in solar cell efficiency of high-quality seed cast mono Si ingot

Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Satoshi Nakano, Bing Gao, Koichi Kakimoto, Kyotaro Nakamura, Yoshio Ohshita, Atsushi Ogura, Shin Sugawara, Takashi Sekiguchi

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We have grown 50 cm2 mono Si ingots by the seed cast technique. The carbon and oxygen concentrations of the ingots have been significantly reduced by improving the gas flow condition and coating. The dislocation density was also reduced by eliminating the extra dislocation generation sources. Owing to these developments, the lifetime of wafers has reached 465 μs. Finally, the efficiency of 18.7% has been achieved, which is comparable to 18.9% of the reference Czochralski (CZ) Si wafer.

Original languageEnglish
Article number062301
JournalApplied Physics Express
Issue number6
Publication statusPublished - Jun 1 2015

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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