Abstract
Thiophene oligomer thin films were prepared by LB method. We evaluated film morphology, structure, and electric property, investigating film preparing conditions. Domain structure were observed by AFM. Packing structure of thiophene LB films were orthorhombic lattice structure. Spacing of lattice plane of LB films correlated with the number of thiophene rings and alkylene groups. We found that electric property of films depended on crystallinity of films.
| Original language | English |
|---|---|
| Title of host publication | 54th SPSJ Annual Meeting 2005 - Polymer Preprints, Japan |
| Number of pages | 1 |
| Volume | 54 |
| Edition | 1 |
| Publication status | Published - Dec 1 2005 |
| Event | 54th SPSJ Annual Meeting 2005 - Yokohama, Japan Duration: May 25 2005 → May 27 2005 |
Other
| Other | 54th SPSJ Annual Meeting 2005 |
|---|---|
| Country | Japan |
| City | Yokohama |
| Period | 5/25/05 → 5/27/05 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
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Imada, H., Nakagawa, M., Hanato, H., Koga, T., & Takahara, A. (2005). Aggregation structure and electric property of silanized thiophen oligomer LB films. In 54th SPSJ Annual Meeting 2005 - Polymer Preprints, Japan (1 ed., Vol. 54)