Air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates is reported for high-speed optoelectronic systems. The calculated and experimental results show that the high permittivity of the Si substrate decreases the resonant modulation frequency to 10 GHz LiNbO 3 resonant-type optical modulator chips on the Si substrate. To prevent this substrate effect, an air-gap was formed between the LiNbO 3 modulator and the Si substrate. The ability to fabricate the airgap structure was demonstrated using low-temperature flip-chip bonding (100 °C) and a Si micromachining process, and its performance was experimentally verified.

Original languageEnglish
Pages (from-to)15739-15749
Number of pages11
JournalOptics Express
Volume19
Issue number17
DOIs
Publication statusPublished - Aug 15 2011

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modulators
air
chips
micromachining
frequency modulation
high speed
permittivity

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates. / Takigawa, Ryo; Higurashi, Eiji; Suga, Tadatomo; Kawanishi, Tetsuya.

In: Optics Express, Vol. 19, No. 17, 15.08.2011, p. 15739-15749.

Research output: Contribution to journalArticle

Takigawa, Ryo ; Higurashi, Eiji ; Suga, Tadatomo ; Kawanishi, Tetsuya. / Air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates. In: Optics Express. 2011 ; Vol. 19, No. 17. pp. 15739-15749.
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