Abstract
Al-doped ZnO polycrystals were fabricated using a combined mechanical alloying and ultra high-pressure sintering process. Fully densified materials with an Al content of 1 at.% were obtained using the process. An electrical resistivity of 1.2 × 10-3 ωcm was achieved by sintering at 900 °C for 0.5 hours.
Original language | English |
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Pages (from-to) | 1201-1204 |
Number of pages | 4 |
Journal | Journal of Materials Science Letters |
Volume | 22 |
Issue number | 17 |
DOIs | |
Publication status | Published - Sept 1 2003 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Materials Science(all)