Al-doped ZnO polycrystals were fabricated using a combined mechanical alloying and ultra high-pressure sintering process. Fully densified materials with an Al content of 1 at.% were obtained using the process. An electrical resistivity of 1.2 × 10-3 ωcm was achieved by sintering at 900 °C for 0.5 hours.
|Number of pages||4|
|Journal||Journal of Materials Science Letters|
|Publication status||Published - Sept 1 2003|
All Science Journal Classification (ASJC) codes
- Materials Science(all)