Al doping from laser irradiated Al film deposited on 4H-SiC

Akihiro Ikeda, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Al doping of 4H-SiC with high surface concentration and deep depth profile is found to be realized by irradiating single-pulse excimer laser to an Al film deposited on the surface. Optical emission spectra suggest that high-temperature molten Al is produced behind the laser-generated high-density Al plasma and Al is diffused from the molten Al into 4H-SiC. The Al doping depth reaches to ~200 nm by irradiating a single laser pulse. A pn junction diode fabricated by the doping with the molten Al shows on/off ratio over 10 orders of magnitude.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsMario Saggio, Fabrizio Roccaforte, Filippo Giannazzo, Danilo Crippa, Francesco La Via, Roberta Nipoti
PublisherTrans Tech Publications Ltd
Pages527-530
Number of pages4
ISBN (Print)9783035710427
DOIs
Publication statusPublished - Jan 1 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: Oct 4 2015Oct 9 2015

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period10/4/1510/9/15

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ikeda, A., Sumina, R., Ikenoue, H., & Asano, T. (2016). Al doping from laser irradiated Al film deposited on 4H-SiC. In M. Saggio, F. Roccaforte, F. Giannazzo, D. Crippa, F. La Via, & R. Nipoti (Eds.), Silicon Carbide and Related Materials 2015 (pp. 527-530). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.527