ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム

Translated title of the contribution: Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism

川畑 直之, 黒澤 昌志, 佐道 泰造, 宮尾 正信

Research output: Contribution to journalArticle

Abstract

Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is required to achieve high speed thin-film transistors and high-efficiency thin-film solar cells. For this purpose, we have developed an advanced Al-induced crystallization (AIC) technique by controlling the interfacial oxide layers. As a results, homogeneous and large-grained (>10 μm) AIC growth was achieved for samples with the whole Ge fractions (0-100%). In addition, we evaluated crystal orientation of the poly-SiGe and discuss the growth mechanism.
Translated title of the contributionAl-Induced Crystallization of SiGe thin-films on glass and its growth mechanism
Original languageJapanese
Pages (from-to)13-17
Number of pages5
JournalIEICE technical report
Volume110
Issue number16
Publication statusPublished - Apr 16 2010

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