Al-induced low-temperature crystallization of Si1 - xGex (0 < x < 1) by controlling layer exchange process

Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Low-temperature (< 450 °C) Al-induced crystallization (AIC) of a-Si1 - xGex (0 < x < 1) films on an insulator has been investigated using a-Si1 - xGex/Al/quartz stacked structures. It was found that the crystal growth features drastically depends on the Ge fraction. Change of the stacked structures to Al/poly-SiGe/quartz uniformly occurred by annealing for low Ge fractions (< 50%). However, the layer exchange and crystallization occurred locally and heterogeneously for high Ge fractions (> 50%). To realize uniform crystallization for high Ge fractions, effects of interfacial Al oxide layer thickness on layer exchange were investigated. By optimizing the oxide layer thickness, the layer exchange process could be controlled, and thus, homogeneous crystallization with large grain sizes (> 20 μm) was achieved for samples with the whole Ge fractions. These findings will be a powerful tool for realizing large poly-SiGe on insulating films for high-efficiency thin-film solar cells and system-in-displays.

Original languageEnglish
JournalThin Solid Films
Volume518
Issue number6 SUPPL. 1
DOIs
Publication statusPublished - Jan 1 2010

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Crystallization
Oxides
crystallization
Solar system
Display devices
Temperature
oxides
solar system
solar cells
grain size
thin films
Thin film solar cells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Al-induced low-temperature crystallization of Si1 - xGex (0 < x < 1) by controlling layer exchange process. / Kurosawa, Masashi; Sadoh, Taizoh; Miyao, Masanobu.

In: Thin Solid Films, Vol. 518, No. 6 SUPPL. 1, 01.01.2010.

Research output: Contribution to journalArticle

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