Abstract
We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.
Original language | English |
---|---|
Pages (from-to) | 7-12 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 60 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jun 1 2011 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry