TY - JOUR
T1 - Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth
AU - Kurosawa, Masashi
AU - Toko, Kaoru
AU - Kawabata, Naoyuki
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
The authors would like to acknowledge the contribution of Mr. Y. Ohta and Mr. H. Yokoyama of Kyushu University, and wish to thank to Prof. T. Asano and Dr. G. Nakagawa of Kyushu University for providing the opportunity to use the EBSD measurement system, and greatly appreciate Drs. I. Mizushima, N. Tamura, and M. Yoshimaru of Semiconductor Technology Academic Research Center (STARC) for their encouragement in the course of this study. M. K. and K. T. acknowledge the support from the JSPS Research Program for Young Scientists. A part of this work was supported by STARC and a Grant-in Aid for Scientific Research from the Ministry of Education, Culture, Sports, and Technology of Japan.
Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/6
Y1 - 2011/6
N2 - We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.
AB - We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.
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U2 - 10.1016/j.sse.2011.01.033
DO - 10.1016/j.sse.2011.01.033
M3 - Article
AN - SCOPUS:79955524774
VL - 60
SP - 7
EP - 12
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 1
ER -