Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

Masashi Kurosawa, Kaoru Toko, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalSolid-State Electronics
Volume60
Issue number1
DOIs
Publication statusPublished - Jun 1 2011

Fingerprint

Quartz
Crystallization
Nucleation
templates
quartz
nucleation
crystallization
Liquid phase epitaxy
liquid phase epitaxy
Substrates
Epitaxial growth
Crystal orientation
epitaxy
Oxides
Seed
seeds
Phase transitions
Crystals
oxides
crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth. / Kurosawa, Masashi; Toko, Kaoru; Kawabata, Naoyuki; Sadoh, Taizoh; Miyao, Masanobu.

In: Solid-State Electronics, Vol. 60, No. 1, 01.06.2011, p. 7-12.

Research output: Contribution to journalArticle

Kurosawa, Masashi ; Toko, Kaoru ; Kawabata, Naoyuki ; Sadoh, Taizoh ; Miyao, Masanobu. / Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth. In: Solid-State Electronics. 2011 ; Vol. 60, No. 1. pp. 7-12.
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