Abstract
We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 7-12 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 60 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jun 1 2011 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth. / Kurosawa, Masashi; Toko, Kaoru; Kawabata, Naoyuki; Sadoh, Taizoh; Miyao, Masanobu.
In: Solid-State Electronics, Vol. 60, No. 1, 01.06.2011, p. 7-12.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth
AU - Kurosawa, Masashi
AU - Toko, Kaoru
AU - Kawabata, Naoyuki
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2011/6/1
Y1 - 2011/6/1
N2 - We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.
AB - We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.
UR - http://www.scopus.com/inward/record.url?scp=79955524774&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955524774&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2011.01.033
DO - 10.1016/j.sse.2011.01.033
M3 - Article
AN - SCOPUS:79955524774
VL - 60
SP - 7
EP - 12
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 1
ER -