Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

Masashi Kurosawa; Kaoru Toko; Naoyuki Kawabata; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.sse.2011.01.033

Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

Masashi Kurosawa, Kaoru Toko, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.

Original language	English
Pages (from-to)	7-12
Number of pages	6
Journal	Solid-State Electronics
Volume	60
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.01.033
Publication status	Published - Jun 1 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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AU - Kurosawa, Masashi

AU - Toko, Kaoru

AU - Kawabata, Naoyuki

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

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