Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

Masashi Kurosawa, Kaoru Toko, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalSolid-State Electronics
Volume60
Issue number1
DOIs
Publication statusPublished - Jun 1 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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