AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

T. Watanabe, J. Ohta, T. Kondo, M. Ohashi, K. Ueno, A. Kobayashi, H. Fujioka

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Abstract

GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm2/Vs and a sheet carrier density of 1.3×1013cm-2 was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

Original languageEnglish
Article number182111
JournalApplied Physics Letters
Volume104
Issue number18
DOIs
Publication statusPublished - May 5 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Watanabe, T., Ohta, J., Kondo, T., Ohashi, M., Ueno, K., Kobayashi, A., & Fujioka, H. (2014). AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering. Applied Physics Letters, 104(18), [182111]. https://doi.org/10.1063/1.4876449