Alignment-free process for asymmetric contact electrodes and their application in light-emitting organic field-effect transistors

Tomo Sakanoue, Masayuki Yahiro, Chihaya Adachi, Jeremy H. Burroughes, Yoshiaki Oku, Noriyuki Shimoji, Takayoshi Takahashi, Akio Toshimitsu

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We developed an alignment-free process for asymmetric contacts of Au and Al and applied it to light-emitting organic field-effect transistors. Because electrons were injected efficiently from Al contacts, the emission intensity and onset voltages for light were significantly better than those in a device with conventional AuCr contacts. Moreover, a device with 1 μm channel length asymmetric contacts of Au and Al showed about 50 times higher current than that of the device with conventional AuCr contacts. This significant improvement can be ascribed to both dual space-charge formation of holes and electrons and low carrier injection barriers.

Original languageEnglish
Article number053505
JournalApplied Physics Letters
Volume92
Issue number5
DOIs
Publication statusPublished - Feb 15 2008

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field effect transistors
alignment
electrodes
carrier injection
high current
space charge
electrons
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Alignment-free process for asymmetric contact electrodes and their application in light-emitting organic field-effect transistors. / Sakanoue, Tomo; Yahiro, Masayuki; Adachi, Chihaya; Burroughes, Jeremy H.; Oku, Yoshiaki; Shimoji, Noriyuki; Takahashi, Takayoshi; Toshimitsu, Akio.

In: Applied Physics Letters, Vol. 92, No. 5, 053505, 15.02.2008.

Research output: Contribution to journalArticle

Sakanoue, Tomo ; Yahiro, Masayuki ; Adachi, Chihaya ; Burroughes, Jeremy H. ; Oku, Yoshiaki ; Shimoji, Noriyuki ; Takahashi, Takayoshi ; Toshimitsu, Akio. / Alignment-free process for asymmetric contact electrodes and their application in light-emitting organic field-effect transistors. In: Applied Physics Letters. 2008 ; Vol. 92, No. 5.
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