All-nanocellulose nonvolatile resistive memory

Umberto Celano, Kazuki Nagashima, Hirotaka Koga, Masaya Nogi, Fuwei Zhuge, Gang Meng, Yong He, Jo De Boeck, Malgorzata Jurczak, Wilfried Vandervorst, Takeshi Yanagida

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Single-use disposable nonvolatile memory devices hold promise for novel applications in internet of everything (IoE) technology by storing the health status of individual humans in daily life. However, conventional memory devices are not disposable because they are mostly composed of non-renewable, non-biodegradable and sometimes toxic materials, causing serious damage to ecological systems when they are released to the environment. Here, we demonstrate an environment-friendly, disposable nonvolatile memory device composed of 99.3 vol.% nanocellulose. Our memory device consists of a nanocellulose-based resistive-switching layer and a nanopaper substrate. The device exhibited nonvolatile resistive switching with the capability of multilevel storage and potential scalability down to the single nanofiber level (ca. 15 nm). The biodegradability of our memory device was confirmed by burying it in natural soil for 26 days.

Original languageEnglish
Pages (from-to)e310
JournalNPG Asia Materials
Volume8
Issue number9
DOIs
Publication statusPublished - Sep 1 2016

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Data storage equipment
Toxic materials
Biodegradability
biodegradability
Nanofibers
ecosystems
Scalability
health
Soil
Health
Internet
soils
Soils
Damage
Substrate
damage
Substrates
Demonstrate

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

All-nanocellulose nonvolatile resistive memory. / Celano, Umberto; Nagashima, Kazuki; Koga, Hirotaka; Nogi, Masaya; Zhuge, Fuwei; Meng, Gang; He, Yong; De Boeck, Jo; Jurczak, Malgorzata; Vandervorst, Wilfried; Yanagida, Takeshi.

In: NPG Asia Materials, Vol. 8, No. 9, 01.09.2016, p. e310.

Research output: Contribution to journalArticle

Celano, U, Nagashima, K, Koga, H, Nogi, M, Zhuge, F, Meng, G, He, Y, De Boeck, J, Jurczak, M, Vandervorst, W & Yanagida, T 2016, 'All-nanocellulose nonvolatile resistive memory', NPG Asia Materials, vol. 8, no. 9, pp. e310. https://doi.org/10.1038/am.2016.144
Celano U, Nagashima K, Koga H, Nogi M, Zhuge F, Meng G et al. All-nanocellulose nonvolatile resistive memory. NPG Asia Materials. 2016 Sep 1;8(9):e310. https://doi.org/10.1038/am.2016.144
Celano, Umberto ; Nagashima, Kazuki ; Koga, Hirotaka ; Nogi, Masaya ; Zhuge, Fuwei ; Meng, Gang ; He, Yong ; De Boeck, Jo ; Jurczak, Malgorzata ; Vandervorst, Wilfried ; Yanagida, Takeshi. / All-nanocellulose nonvolatile resistive memory. In: NPG Asia Materials. 2016 ; Vol. 8, No. 9. pp. e310.
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