TY - JOUR
T1 - All-Solid-State Organic Schmitt Trigger Implemented by Twin Two-in-One Ferroelectric Memory Transistors
AU - Hwang, Sunbin
AU - Jang, Sukjae
AU - Bae, Sukang
AU - Lee, Seoung Ki
AU - Lee, Sang Hyun
AU - Fabiano, Simone
AU - Berggren, Magnus
AU - Lee, Takhee
AU - Kim, Tae Wook
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea (NRF‐2020R1A2C2010163) and also partially supported by a Korea Institute for Advancement of Technology (KIAT) grant funded by the Korean Government (MOTIE) (P0002007, The Competency Development Program for Industry Specialist). TL thanks the financial support from the National Creative Research Laboratory program (Grant No. 2012026372) through the National Research Foundation of Korea.
Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/5/1
Y1 - 2020/5/1
N2 - Although there have been many attempts to replace conventional inorganic electronics with organic materials that can be mass produced at low cost, few organic electronic filters to increase immunity to electrical noise have been reported thus far. Conventional Schmitt triggers or their inverters are used in many electronic circuits as versatile electronic noise filters. However, it is challenging to manufacture organic electronic systems with complex circuitry. In this study, a simple, all-solid-state organic Schmitt trigger consisting of twin two-in-one organic ferroelectric memory transistors with the same chemical compositions and device dimensions but different threshold voltages is introduced. Threshold voltages and hysteresis in the two-in-one devices can be controlled by polarization switching as demonstrated in a previous study. Hysteresis of a ferroelectric p-type depletion load inverter can be achieved using twin two-in-one devices when the sweep voltage is higher than the critical gate voltages. This facilitates inverter characteristics at two different threshold voltages, and realizing a Schmitt trigger. Finally, based on simulation program with integrated circuit emphasis (SPICE) simulation, guidelines are proposed on how to design organic Schmitt triggers with p- or n-type materials and ferroelectric or charge-trapping mechanisms to achieve inverting or non-inverting characteristics.
AB - Although there have been many attempts to replace conventional inorganic electronics with organic materials that can be mass produced at low cost, few organic electronic filters to increase immunity to electrical noise have been reported thus far. Conventional Schmitt triggers or their inverters are used in many electronic circuits as versatile electronic noise filters. However, it is challenging to manufacture organic electronic systems with complex circuitry. In this study, a simple, all-solid-state organic Schmitt trigger consisting of twin two-in-one organic ferroelectric memory transistors with the same chemical compositions and device dimensions but different threshold voltages is introduced. Threshold voltages and hysteresis in the two-in-one devices can be controlled by polarization switching as demonstrated in a previous study. Hysteresis of a ferroelectric p-type depletion load inverter can be achieved using twin two-in-one devices when the sweep voltage is higher than the critical gate voltages. This facilitates inverter characteristics at two different threshold voltages, and realizing a Schmitt trigger. Finally, based on simulation program with integrated circuit emphasis (SPICE) simulation, guidelines are proposed on how to design organic Schmitt triggers with p- or n-type materials and ferroelectric or charge-trapping mechanisms to achieve inverting or non-inverting characteristics.
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U2 - 10.1002/aelm.201901263
DO - 10.1002/aelm.201901263
M3 - Article
AN - SCOPUS:85082071870
VL - 6
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 5
M1 - 1901263
ER -