Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution

Daichi Marui, Akihiro Ikeda, Koji Nishi, Hiroshi Ikenoue, Tanemasa Asano

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


We have found that aluminum doping into 4H-SiC is performed by irradiating excimer laser light to 4H-SiC immersed in aluminum chloride solution. Aluminum is introduced in SiC at the concentration of over 1 × 10 20cm-3 near the surface while, chlorine hardly diffuses into 4H-SiC. After the laser irradiation in aluminum chloride solution, the resistance of the laser-irradiated region decreases with increasing laser fluence. Hall effect measurement shows that the laser irradiation produces a p-type layer and that its sheet carrier concentration is 2.14 × 10 11cm-2. In addition, we produce a pn junction by doping the surface of n-type 4H-SiC and by aluminum doping. The pn junction shows rectifying characteristics whose on/off ratio is about 7 decades and ideality factor is 1.15. This technique is one of the strong candidate local doping techniques for SiC.

Original languageEnglish
Article number06JF03
JournalJapanese journal of applied physics
Issue number6 SPEC. ISSUE
Publication statusPublished - Jun 2014

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution'. Together they form a unique fingerprint.

Cite this