Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

R. S. Kern, L. B. Rowland, S. Tanaka, R. F. Davis

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900-1300°C on vicinal α(6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC)1-x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.

Original languageEnglish
Pages (from-to)1816-1822
Number of pages7
JournalJournal of Materials Research
Volume13
Issue number7
DOIs
Publication statusPublished - Jul 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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