Abstract
Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900-1300°C on vicinal α(6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC)1-x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.
| Original language | English |
|---|---|
| Pages (from-to) | 1816-1822 |
| Number of pages | 7 |
| Journal | Journal of Materials Research |
| Volume | 13 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jan 1 1998 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy. / Kern, R. S.; Rowland, L. B.; Tanaka, S.; Davis, R. F.
In: Journal of Materials Research, Vol. 13, No. 7, 01.01.1998, p. 1816-1822.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
AU - Kern, R. S.
AU - Rowland, L. B.
AU - Tanaka, S.
AU - Davis, R. F.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900-1300°C on vicinal α(6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC)1-x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.
AB - Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900-1300°C on vicinal α(6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC)1-x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.
UR - http://www.scopus.com/inward/record.url?scp=0032121603&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032121603&partnerID=8YFLogxK
U2 - 10.1557/JMR.1998.0257
DO - 10.1557/JMR.1998.0257
M3 - Article
AN - SCOPUS:0032121603
VL - 13
SP - 1816
EP - 1822
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 7
ER -