TY - JOUR
T1 - Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
AU - Kern, R. S.
AU - Rowland, L. B.
AU - Tanaka, S.
AU - Davis, R. F.
N1 - Funding Information:
The authors acknowledge the Office of Naval Research for the sponsorship of this research under Con- tracts N00014-92-J-1500 and N00014-92-J-1477, Cree Research, Inc. for the vicinal 6H-SiC substrates, Applied Science and Technology, Inc. for the ECR plasma source, A. D. Batchelor of NCSU for help with the SEM study, R. L. Moore at Evans East, and D. A. Ricks of NCSU for the AES analysis, J. Bentley of Oak Ridge National Laboratories for helpful discussions, and K. Järrendahl of NCSU for careful review of this manuscript. This research was also partially sponsored by the Division of Materials Sciences, United States Department of Energy, under Contract DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc., and through the SHaRE Program under Contract DE-AC05-760R00033 with Oak Ridge Associated Universities.
PY - 1998/7
Y1 - 1998/7
N2 - Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900-1300°C on vicinal α(6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC)1-x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.
AB - Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900-1300°C on vicinal α(6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC)1-x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.
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U2 - 10.1557/JMR.1998.0257
DO - 10.1557/JMR.1998.0257
M3 - Article
AN - SCOPUS:0032121603
VL - 13
SP - 1816
EP - 1822
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 7
ER -