Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

R. S. Kern, L. B. Rowland, S. Tanaka, R. F. Davis

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900-1300°C on vicinal α(6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC)1-x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.

Original languageEnglish
Pages (from-to)1816-1822
Number of pages7
JournalJournal of Materials Research
Volume13
Issue number7
DOIs
Publication statusPublished - Jan 1 1998
Externally publishedYes

Fingerprint

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide
silicon carbides
Solid solutions
solid solutions
molecular beam epitaxy
Plasmas
Crystal structure
gases
crystal structure
Reflection high energy electron diffraction
Epilayers
zincblende
High resolution transmission electron microscopy
wurtzite
high energy electrons
Spectrometry

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy. / Kern, R. S.; Rowland, L. B.; Tanaka, S.; Davis, R. F.

In: Journal of Materials Research, Vol. 13, No. 7, 01.01.1998, p. 1816-1822.

Research output: Contribution to journalArticle

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