Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

L. B. Rowland, R. S. Kern, S. Tanaka, Robert F. Davis

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Pseudomorphic structures containing β(3C)-SiC and 2H-AlN have been grown on vicinal α(6H)-SiC(0001) at 1050°C by plasma-assisted, gas-source molecular beam epitaxy. Reflection-high energy electron diffraction and cross-sectional high-resolution transmission electron microscopy showed all layers to be monocrystalline. The AlN layers were uniform in thickness. Defects in these layers initiated at steps on the 6H-SiC film. The 3C-SiC layers contained a high density of stacking faults and microtwins caused primarily by the interfacial stresses generated by the mismatch in lattice parameters between AlN and β-SiC coupled with the very low stacking fault energy of SiC. This is the first report of the deposition of single crystal SiC/AlN/SiC thin film heterostructures on any substrate as well as the first report of the epitaxial growth of single crystal layers of binary materials with three different crystal structures.

Original languageEnglish
Pages (from-to)3333-3335
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number25
DOIs
Publication statusPublished - Dec 1 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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