Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

Yun Sok Shin, Roland Brunner, Akihiro Shibatomi, Toshiaki Obata, Tomohiro Otsuka, Jun Yoneda, Yasuhiro Shiraki, Kentarou Sawano, Yasuhiro Tokura, Yuichi Harada, Koji Ishibashi, Seigo Tarucha

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Abstract

We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O 3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.

Original languageEnglish
Article number055004
JournalSemiconductor Science and Technology
Volume26
Issue number5
DOIs
Publication statusPublished - Apr 5 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Shin, Y. S., Brunner, R., Shibatomi, A., Obata, T., Otsuka, T., Yoneda, J., Shiraki, Y., Sawano, K., Tokura, Y., Harada, Y., Ishibashi, K., & Tarucha, S. (2011). Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems. Semiconductor Science and Technology, 26(5), [055004]. https://doi.org/10.1088/0268-1242/26/5/055004