Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

Yun Sok Shin, Roland Brunner, Akihiro Shibatomi, Toshiaki Obata, Tomohiro Otsuka, Jun Yoneda, Yasuhiro Shiraki, Kentarou Sawano, Yasuhiro Tokura, Yuichi Harada, Koji Ishibashi, Seigo Tarucha

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O 3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.

Original languageEnglish
Article number055004
JournalSemiconductor Science and Technology
Volume26
Issue number5
DOIs
Publication statusPublished - Apr 5 2011
Externally publishedYes

Fingerprint

Two dimensional electron gas
Aluminum Oxide
Semiconductor quantum dots
electron gas
aluminum oxides
quantum dots
Aluminum
Oxides
leakage
oscillations
Leakage currents
retarding

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Shin, Y. S., Brunner, R., Shibatomi, A., Obata, T., Otsuka, T., Yoneda, J., ... Tarucha, S. (2011). Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems. Semiconductor Science and Technology, 26(5), [055004]. https://doi.org/10.1088/0268-1242/26/5/055004

Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems. / Shin, Yun Sok; Brunner, Roland; Shibatomi, Akihiro; Obata, Toshiaki; Otsuka, Tomohiro; Yoneda, Jun; Shiraki, Yasuhiro; Sawano, Kentarou; Tokura, Yasuhiro; Harada, Yuichi; Ishibashi, Koji; Tarucha, Seigo.

In: Semiconductor Science and Technology, Vol. 26, No. 5, 055004, 05.04.2011.

Research output: Contribution to journalArticle

Shin, YS, Brunner, R, Shibatomi, A, Obata, T, Otsuka, T, Yoneda, J, Shiraki, Y, Sawano, K, Tokura, Y, Harada, Y, Ishibashi, K & Tarucha, S 2011, 'Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems', Semiconductor Science and Technology, vol. 26, no. 5, 055004. https://doi.org/10.1088/0268-1242/26/5/055004
Shin, Yun Sok ; Brunner, Roland ; Shibatomi, Akihiro ; Obata, Toshiaki ; Otsuka, Tomohiro ; Yoneda, Jun ; Shiraki, Yasuhiro ; Sawano, Kentarou ; Tokura, Yasuhiro ; Harada, Yuichi ; Ishibashi, Koji ; Tarucha, Seigo. / Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems. In: Semiconductor Science and Technology. 2011 ; Vol. 26, No. 5.
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