Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

Yun Sok Shin; Roland Brunner; Akihiro Shibatomi; Toshiaki Obata; Tomohiro Otsuka; Jun Yoneda; Yasuhiro Shiraki; Kentarou Sawano; Yasuhiro Tokura; Yuichi Harada; Koji Ishibashi; Seigo Tarucha

doi:10.1088/0268-1242/26/5/055004

Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

Yun Sok Shin, Roland Brunner, Akihiro Shibatomi, Toshiaki Obata, Tomohiro Otsuka, Jun Yoneda, Yasuhiro Shiraki, Kentarou Sawano, Yasuhiro Tokura, Yuichi Harada, Koji Ishibashi, Seigo Tarucha

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al₂O₃ film. In comparison to the conventional surface Schottky gates, gating through a thin Al₂O ₃ layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.

Original language	English
Article number	055004
Journal	Semiconductor Science and Technology
Volume	26
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/26/5/055004
Publication status	Published - 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/26/5/055004

Cite this

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title = "Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems",

abstract = "We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O 3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.",

author = "Shin, {Yun Sok} and Roland Brunner and Akihiro Shibatomi and Toshiaki Obata and Tomohiro Otsuka and Jun Yoneda and Yasuhiro Shiraki and Kentarou Sawano and Yasuhiro Tokura and Yuichi Harada and Koji Ishibashi and Seigo Tarucha",

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doi = "10.1088/0268-1242/26/5/055004",

language = "English",

volume = "26",

journal = "Semiconductor Science and Technology",

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TY - JOUR

T1 - Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

AU - Shin, Yun Sok

AU - Brunner, Roland

AU - Shibatomi, Akihiro

AU - Obata, Toshiaki

AU - Otsuka, Tomohiro

AU - Yoneda, Jun

AU - Shiraki, Yasuhiro

AU - Sawano, Kentarou

AU - Tokura, Yasuhiro

AU - Harada, Yuichi

AU - Ishibashi, Koji

AU - Tarucha, Seigo

PY - 2011

Y1 - 2011

N2 - We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O 3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.

AB - We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O 3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.

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U2 - 10.1088/0268-1242/26/5/055004

DO - 10.1088/0268-1242/26/5/055004

M3 - Article

AN - SCOPUS:79953239427

SN - 0268-1242

VL - 26

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

M1 - 055004

ER -

Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

Abstract

All Science Journal Classification (ASJC) codes

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