Ambipolar carrier transport in polycrystalline pentacene thin-film transistors

Takeshi Yasuda, Takeshi Goto, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We have investigated the dependence of polycrystalline pentacene thin-film transistors (TFTs) characteristics on work function of source-drain contact metals. The pentacene TFTs using Mg, Al, Ag, and Au source-drain electrodes showed only p-type characteristics and the field-effect hole mobilities were strongly dependent on their work function. On the other hand, the pentacene TFTs using Ca source-drain electrodes showed typical ambipolar characteristics. The field-effect hole mobility of 4.5 × 10 -4 cm 2 /Vs and field-effect electron mobility of 2.7 × 10 -5 cm 2 /Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene TFTs was ascribed to the lowering of barrier for electron injection at source electrodes.

Original languageEnglish
Pages (from-to)219-224
Number of pages6
JournalMolecular Crystals and Liquid Crystals
Volume444
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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