Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal

Satria Zulkarnaen Bisri, Tetsuo Takahashi, Taishi Takenobu, Masayuki Yahiro, Chihaya Adachi, Yoshihiro Iwasa

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

An ambipolar field-effect transistor (FET) based on a 1,3,6,8- tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10 -2cm2/(V·s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number20-24
DOIs
Publication statusPublished - Jun 15 2007

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field effect transistors
single crystals
electrodes
hole mobility
electron mobility
crystal field theory
injection
metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal. / Bisri, Satria Zulkarnaen; Takahashi, Tetsuo; Takenobu, Taishi; Yahiro, Masayuki; Adachi, Chihaya; Iwasa, Yoshihiro.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 20-24, 15.06.2007.

Research output: Contribution to journalArticle

Bisri, Satria Zulkarnaen ; Takahashi, Tetsuo ; Takenobu, Taishi ; Yahiro, Masayuki ; Adachi, Chihaya ; Iwasa, Yoshihiro. / Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal. In: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; Vol. 46, No. 20-24.
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