Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal

Satria Zulkarnaen Bisri, Tetsuo Takahashi, Taishi Takenobu, Masayuki Yahiro, Chihaya Adachi, Yoshihiro Iwasa

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

An ambipolar field-effect transistor (FET) based on a 1,3,6,8- tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10 -2cm2/(V·s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.

Original languageEnglish
Pages (from-to)L596-L598
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number20-24
DOIs
Publication statusPublished - Jun 15 2007

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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