Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

Takeshi Yasuda, Takeshi Goto, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Contribution to journalArticle

221 Citations (Scopus)

Abstract

The fabrication of organic field-effect transistors (OFET) of a vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes, was analyzed in an oxygen-free condition. The FET exhibited ambipolar characteristics and field-effect hole mobility of 4.5×19 -4 cm2/Vs and field-effect electron mobility of 2.7×10-5 cm2/Vs were also estimated from saturation currents. The appearance of electron enhancement mode in pentacene FET was found to depend on lowering of barrier for electron injection at source-drain electrodes. The results show that effective elimination of electron traps is essential requirement for observation of ambipolar behavior in pentacene.

Original languageEnglish
Pages (from-to)2098-2100
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number11
DOIs
Publication statusPublished - Sep 13 2004

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calcium
field effect transistors
electrodes
electrons
hole mobility
electron mobility
elimination
traps
injection
saturation
requirements
vacuum
fabrication
augmentation
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ambipolar pentacene field-effect transistors with calcium source-drain electrodes. / Yasuda, Takeshi; Goto, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo.

In: Applied Physics Letters, Vol. 85, No. 11, 13.09.2004, p. 2098-2100.

Research output: Contribution to journalArticle

Yasuda, Takeshi ; Goto, Takeshi ; Fujita, Katsuhiko ; Tsutsui, Tetsuo. / Ambipolar pentacene field-effect transistors with calcium source-drain electrodes. In: Applied Physics Letters. 2004 ; Vol. 85, No. 11. pp. 2098-2100.
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