Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

Takeshi Yasuda, Takeshi Goto, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Contribution to journalArticle

225 Citations (Scopus)

Abstract

The fabrication of organic field-effect transistors (OFET) of a vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes, was analyzed in an oxygen-free condition. The FET exhibited ambipolar characteristics and field-effect hole mobility of 4.5×19 -4 cm2/Vs and field-effect electron mobility of 2.7×10-5 cm2/Vs were also estimated from saturation currents. The appearance of electron enhancement mode in pentacene FET was found to depend on lowering of barrier for electron injection at source-drain electrodes. The results show that effective elimination of electron traps is essential requirement for observation of ambipolar behavior in pentacene.

Original languageEnglish
Pages (from-to)2098-2100
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number11
DOIs
Publication statusPublished - Sep 13 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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