Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

Takeshi Yasuda; Takeshi Goto; Katsuhiko Fujita; Tetsuo Tsutsui

doi:10.1063/1.1794375

Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

Takeshi Yasuda, Takeshi Goto, Katsuhiko Fujita, Tetsuo Tsutsui

Department of Advanced Device Materials

Research output: Contribution to journal › Article › peer-review

238 Citations (Scopus)

Abstract

The fabrication of organic field-effect transistors (OFET) of a vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes, was analyzed in an oxygen-free condition. The FET exhibited ambipolar characteristics and field-effect hole mobility of 4.5×19 ^-4 cm²/Vs and field-effect electron mobility of 2.7×10^-5 cm²/Vs were also estimated from saturation currents. The appearance of electron enhancement mode in pentacene FET was found to depend on lowering of barrier for electron injection at source-drain electrodes. The results show that effective elimination of electron traps is essential requirement for observation of ambipolar behavior in pentacene.

Original language	English
Pages (from-to)	2098-2100
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1794375
Publication status	Published - Sept 13 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1794375

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title = "Ambipolar pentacene field-effect transistors with calcium source-drain electrodes",

abstract = "The fabrication of organic field-effect transistors (OFET) of a vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes, was analyzed in an oxygen-free condition. The FET exhibited ambipolar characteristics and field-effect hole mobility of 4.5×19 -4 cm2/Vs and field-effect electron mobility of 2.7×10-5 cm2/Vs were also estimated from saturation currents. The appearance of electron enhancement mode in pentacene FET was found to depend on lowering of barrier for electron injection at source-drain electrodes. The results show that effective elimination of electron traps is essential requirement for observation of ambipolar behavior in pentacene.",

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AU - Yasuda, Takeshi

AU - Goto, Takeshi

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AU - Tsutsui, Tetsuo

PY - 2004/9/13

Y1 - 2004/9/13

N2 - The fabrication of organic field-effect transistors (OFET) of a vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes, was analyzed in an oxygen-free condition. The FET exhibited ambipolar characteristics and field-effect hole mobility of 4.5×19 -4 cm2/Vs and field-effect electron mobility of 2.7×10-5 cm2/Vs were also estimated from saturation currents. The appearance of electron enhancement mode in pentacene FET was found to depend on lowering of barrier for electron injection at source-drain electrodes. The results show that effective elimination of electron traps is essential requirement for observation of ambipolar behavior in pentacene.

AB - The fabrication of organic field-effect transistors (OFET) of a vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes, was analyzed in an oxygen-free condition. The FET exhibited ambipolar characteristics and field-effect hole mobility of 4.5×19 -4 cm2/Vs and field-effect electron mobility of 2.7×10-5 cm2/Vs were also estimated from saturation currents. The appearance of electron enhancement mode in pentacene FET was found to depend on lowering of barrier for electron injection at source-drain electrodes. The results show that effective elimination of electron traps is essential requirement for observation of ambipolar behavior in pentacene.

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Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

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