Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics

Hisato Yabuta; Naho Itagaki; Toshikazu Ekino; Yuzo Shigesato

doi:10.1109/OJNANO.2022.3222850

Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics

Hisato Yabuta, Naho Itagaki, Toshikazu Ekino, Yuzo Shigesato

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost the same degree as those of a-IGZO films. Although the reductive annealing with the SiN_x underlayer makes an a-IGZO film degenerate semiconductor and its TFT inoperative, a-IGMO TFTs successfully operated after this reductive process. Break-junction tunnelling spectroscopy which was applicable not to a-IGMO but to a-IGZO with the reductive process showed a noticeable density of state character in the vicinity of the Fermi level for a-IGZO, which is consistent with its property.

Original language	English
Pages (from-to)	1-16
Number of pages	16
Journal	IEEE Open Journal of Nanotechnology
DOIs	https://doi.org/10.1109/OJNANO.2022.3222850
Publication status	Accepted/In press - 2022

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Computer Science Applications
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/OJNANO.2022.3222850

Cite this

@article{50ad6ade97584ec98b270cbedf1e544c,

title = "Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics",

abstract = "We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost the same degree as those of a-IGZO films. Although the reductive annealing with the SiNx underlayer makes an a-IGZO film degenerate semiconductor and its TFT inoperative, a-IGMO TFTs successfully operated after this reductive process. Break-junction tunnelling spectroscopy which was applicable not to a-IGMO but to a-IGZO with the reductive process showed a noticeable density of state character in the vicinity of the Fermi level for a-IGZO, which is consistent with its property.",

author = "Hisato Yabuta and Naho Itagaki and Toshikazu Ekino and Yuzo Shigesato",

note = "Publisher Copyright: Author",

year = "2022",

doi = "10.1109/OJNANO.2022.3222850",

language = "English",

pages = "1--16",

journal = "IEEE Open Journal of Nanotechnology",

issn = "2644-1292",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering

T2 - Optical, Electrical Properties and Thin-Film-Transistor Characteristics

AU - Yabuta, Hisato

AU - Itagaki, Naho

AU - Ekino, Toshikazu

AU - Shigesato, Yuzo

N1 - Publisher Copyright: Author

PY - 2022

Y1 - 2022

N2 - We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost the same degree as those of a-IGZO films. Although the reductive annealing with the SiNx underlayer makes an a-IGZO film degenerate semiconductor and its TFT inoperative, a-IGMO TFTs successfully operated after this reductive process. Break-junction tunnelling spectroscopy which was applicable not to a-IGMO but to a-IGZO with the reductive process showed a noticeable density of state character in the vicinity of the Fermi level for a-IGZO, which is consistent with its property.

AB - We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost the same degree as those of a-IGZO films. Although the reductive annealing with the SiNx underlayer makes an a-IGZO film degenerate semiconductor and its TFT inoperative, a-IGMO TFTs successfully operated after this reductive process. Break-junction tunnelling spectroscopy which was applicable not to a-IGMO but to a-IGZO with the reductive process showed a noticeable density of state character in the vicinity of the Fermi level for a-IGZO, which is consistent with its property.

UR - http://www.scopus.com/inward/record.url?scp=85142829296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85142829296&partnerID=8YFLogxK

U2 - 10.1109/OJNANO.2022.3222850

DO - 10.1109/OJNANO.2022.3222850

M3 - Article

AN - SCOPUS:85142829296

SP - 1

EP - 16

JO - IEEE Open Journal of Nanotechnology

JF - IEEE Open Journal of Nanotechnology

SN - 2644-1292

ER -

Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this