Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics

Hisato Yabuta, Naho Itagaki, Toshikazu Ekino, Yuzo Shigesato

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost the same degree as those of a-IGZO films. Although the reductive annealing with the SiNx underlayer makes an a-IGZO film degenerate semiconductor and its TFT inoperative, a-IGMO TFTs successfully operated after this reductive process. Break-junction tunnelling spectroscopy which was applicable not to a-IGMO but to a-IGZO with the reductive process showed a noticeable density of state character in the vicinity of the Fermi level for a-IGZO, which is consistent with its property.

Original languageEnglish
Pages (from-to)1-16
Number of pages16
JournalIEEE Open Journal of Nanotechnology
DOIs
Publication statusAccepted/In press - 2022

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Materials Chemistry

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