Amorphous silicon TFT using Schottky barrier contacts for source and drain

Akihiro Nakae, Reiji Hattori, Junji Shirafuji

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Amorphous silicon thin film transistors using Schottky barrier contacts for source and drain have been studied. It is expected that a-Si SBTFT can utilize not only the conductivity change at the surface of a-Si but also the nonlinear current increase through the Schottky barrier at the source contact in reverse bias directions. Schottky barrier contacts for source and drain make the fabrication processes easier and reduce the OFF current in comparison with that of conventional TFT's with ohmic contacts for source and drain.

Original languageEnglish
Title of host publicationTechnology Reports of the Osaka University
Pages261-267
Number of pages7
Volume42
Edition2101-23
Publication statusPublished - Jan 1 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Amorphous silicon TFT using Schottky barrier contacts for source and drain'. Together they form a unique fingerprint.

Cite this