Amorphous silicon thin-film transistors base active-matrix organic light-emitting displays

J. Kanicki; J. H. Kim; J. Y. Nahm; Y. He; Reiji Hattori

Amorphous silicon thin-film transistors base active-matrix organic light-emitting displays

J. Kanicki, J. H. Kim, J. Y. Nahm, Y. He, Reiji Hattori

Advanced Project Division

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

In our laboratory we have simulated, designed, and fabricated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) based pixel electrode circuits for active-matrix organic light-emitting displays (AM-OLEDs). These pixel circuits, having very small feed-through voltages, can supply a continuous output current at an adequate level for AM-OLEDs up to 500 dpi of resolution. Each pixel electrode has also compensation circuits that will allow to adjust the output current level for the OLED and a-Si:H TFTs threshold voltage variations. Therefore, we can control display brightness uniformity at an acceptable level.

Original language	English
Pages (from-to)	315-318
Number of pages	4
Journal	SID Conference Record of the International Display Research Conference
Publication status	Published - Dec 1 2001
Event	Asia Display/IDW 2001 - Nagoya, Japan Duration: Oct 16 2002 → Oct 19 2002

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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abstract = "In our laboratory we have simulated, designed, and fabricated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) based pixel electrode circuits for active-matrix organic light-emitting displays (AM-OLEDs). These pixel circuits, having very small feed-through voltages, can supply a continuous output current at an adequate level for AM-OLEDs up to 500 dpi of resolution. Each pixel electrode has also compensation circuits that will allow to adjust the output current level for the OLED and a-Si:H TFTs threshold voltage variations. Therefore, we can control display brightness uniformity at an acceptable level.",

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T1 - Amorphous silicon thin-film transistors base active-matrix organic light-emitting displays

AU - Kanicki, J.

AU - Kim, J. H.

AU - Nahm, J. Y.

AU - He, Y.

AU - Hattori, Reiji

PY - 2001/12/1

Y1 - 2001/12/1

N2 - In our laboratory we have simulated, designed, and fabricated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) based pixel electrode circuits for active-matrix organic light-emitting displays (AM-OLEDs). These pixel circuits, having very small feed-through voltages, can supply a continuous output current at an adequate level for AM-OLEDs up to 500 dpi of resolution. Each pixel electrode has also compensation circuits that will allow to adjust the output current level for the OLED and a-Si:H TFTs threshold voltage variations. Therefore, we can control display brightness uniformity at an acceptable level.

AB - In our laboratory we have simulated, designed, and fabricated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) based pixel electrode circuits for active-matrix organic light-emitting displays (AM-OLEDs). These pixel circuits, having very small feed-through voltages, can supply a continuous output current at an adequate level for AM-OLEDs up to 500 dpi of resolution. Each pixel electrode has also compensation circuits that will allow to adjust the output current level for the OLED and a-Si:H TFTs threshold voltage variations. Therefore, we can control display brightness uniformity at an acceptable level.

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M3 - Conference article

AN - SCOPUS:0035782769

SP - 315

EP - 318

JO - SID Conference Record of the International Display Research Conference

JF - SID Conference Record of the International Display Research Conference

SN - 1083-1312

T2 - Asia Display/IDW 2001

Y2 - 16 October 2002 through 19 October 2002

ER -

Amorphous silicon thin-film transistors base active-matrix organic light-emitting displays

Abstract

All Science Journal Classification (ASJC) codes

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