Amorphous silicon thin-film transistors base active-matrix organic light-emitting displays

J. Kanicki, J. H. Kim, J. Y. Nahm, Y. He, Reiji Hattori

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


In our laboratory we have simulated, designed, and fabricated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) based pixel electrode circuits for active-matrix organic light-emitting displays (AM-OLEDs). These pixel circuits, having very small feed-through voltages, can supply a continuous output current at an adequate level for AM-OLEDs up to 500 dpi of resolution. Each pixel electrode has also compensation circuits that will allow to adjust the output current level for the OLED and a-Si:H TFTs threshold voltage variations. Therefore, we can control display brightness uniformity at an acceptable level.

Original languageEnglish
Pages (from-to)315-318
Number of pages4
JournalSID Conference Record of the International Display Research Conference
Publication statusPublished - Dec 1 2001
EventAsia Display/IDW 2001 - Nagoya, Japan
Duration: Oct 16 2002Oct 19 2002

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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