Amphoteric property of electrically active nickel in silicon

Hajime Kitagawa, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    31 Citations (Scopus)

    Abstract

    Deep levels in nickel-doped n- and p-type silicon have been studied by the Hall effect and deep level transient spectroscopy (DLTS) under various diffusion and isothermal annealing conditions. It was found that nickel introduces an acceptor level of 0.47±0.04 eV from the conduction band and a donor level of 0.18±0.02 eV from the valence band, and that the concentrations of the two levels are practically identical. Isothermal annealing experiments have revealed stable behaviors of the two levels. The results suggest that the two levels are different charge states of the same substitutional nickel atoms in silicon.

    Original languageEnglish
    Pages (from-to)305-310
    Number of pages6
    JournalJapanese Journal of Applied Physics
    Volume28
    Issue number3 R
    DOIs
    Publication statusPublished - Jan 1 1989

    Fingerprint

    Isothermal annealing
    Nickel
    nickel
    Silicon
    silicon
    Deep level transient spectroscopy
    Hall effect
    Valence bands
    Conduction bands
    Atoms
    annealing
    Experiments
    conduction bands
    valence
    spectroscopy
    atoms

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Amphoteric property of electrically active nickel in silicon. / Kitagawa, Hajime; Nakashima, Hiroshi.

    In: Japanese Journal of Applied Physics, Vol. 28, No. 3 R, 01.01.1989, p. 305-310.

    Research output: Contribution to journalArticle

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