An analysis of temperature distribution near the melt-crystal interface in silicon Czochralski growth with a transverse magnetic field

Lijun Liu, Satoshi Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

A three-dimensional (3D) global analysis was carried out numerically for a small silicon Czochralski furnace in a transverse magnetic field to clarify temperature distribution near a melt-crystal interface. The melt-crystal interface shape and the axial temperature gradients in solid and liquid near the interface were calculated as functions of the magnetic field intensity and the pulling rate of a crystal. It was found that the axial temperature gradient in the crystal increases with increase in the crystal-pulling rate and that in the melt decreases near the interface. With increase in intensity of the magnetic field, the axial temperature gradients in both crystal and melt increase. The influence of melt convection becomes smaller with increase in either the magnetic field intensity or the crystal-pulling rate. The melt-crystal interface moves upward with increase in either the ratio between crystal-pulling rate and temperature gradient in the crystal or the intensity of the applied magnetic field.

Original languageEnglish
Pages (from-to)49-59
Number of pages11
JournalJournal of Crystal Growth
Volume282
Issue number1-2
DOIs
Publication statusPublished - Aug 15 2005

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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