An effect of crystallographic distortion on carrier mobility in poly(3-hexylthiophene) thin films

Tatsuki Abe, Daisuke Kawaguchi, Motonori Watanabe, Taiki Hoshino, Tatsumi Ishihara, Keiji Tanaka

Research output: Contribution to journalArticlepeer-review

Abstract

The aggregation states and physical properties of polymers in thin films deviate from those found in the bulk. Although an effect of the thickness on the carrier mobility for thin films of poly(3-hexylthiophene) (P3HT) has been widely studied, there is a lack of discussion in terms of crystallographic distortion. Here, we demonstrate how the out-of-plane hole mobility in P3HT, which is a typical semiconducting polymer, changes with decreasing film thickness. Time-of-flight measurements with an analysis using the Gaussian disorder model revealed that the zero-field out-of-plane hole mobility decreased with decreasing thickness because of an increase in the energetical and spatial distribution of hopping sites. Grazing incidence wide-angle x-ray diffraction measurements revealed that such distributions of charge carriers were induced by the crystallographic distortion of P3HT in the thin films.

Original languageEnglish
Article number181601
JournalApplied Physics Letters
Volume118
Issue number18
DOIs
Publication statusPublished - May 3 2021

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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