An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications

S. A.Z. Murad, Ramesh Pokharel, A. I.A. Galal, R. Sapawi, Haruichi Kanaya, K. Yoshida

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement results indicated that the input return loss S11 less than -6 dB, output return loss S22 less than -7 dB, and excellent gain flatness approximately 14.5 ±0.5 dB over the frequency range of interest. The output 1 dB compression of 7 dBm, the output third-order intercept point (OIP3) of 18 dBm, and a phase linearity property (group delay) of ± 178.5 ps across the whole band were obtained with a power consumption of 24 mW.

Original languageEnglish
Article number5504002
Pages (from-to)510-512
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume20
Issue number9
DOIs
Publication statusPublished - Sep 1 2010

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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