TY - JOUR
T1 - An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications
AU - Murad, S. A.Z.
AU - Pokharel, R. K.
AU - Galal, A. I.A.
AU - Sapawi, R.
AU - Kanaya, H.
AU - Yoshida, K.
N1 - Funding Information:
Manuscript received January 29, 2010; revised May 18, 2010; accepted June 03, 2010. Date of publication July 08, 2010; date of current version September 03, 2010. This work was supported in part by a grant of Ministry of Education, Culture, Sports, Science and Technology (MEXT) and KAKENHI, by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with CADENCE Corporation and Agilent Corporation.
PY - 2010/9
Y1 - 2010/9
N2 - This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement results indicated that the input return loss S11 less than -6 dB, output return loss S22 less than -7 dB, and excellent gain flatness approximately 14.5 ±0.5 dB over the frequency range of interest. The output 1 dB compression of 7 dBm, the output third-order intercept point (OIP3) of 18 dBm, and a phase linearity property (group delay) of ± 178.5 ps across the whole band were obtained with a power consumption of 24 mW.
AB - This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement results indicated that the input return loss S11 less than -6 dB, output return loss S22 less than -7 dB, and excellent gain flatness approximately 14.5 ±0.5 dB over the frequency range of interest. The output 1 dB compression of 7 dBm, the output third-order intercept point (OIP3) of 18 dBm, and a phase linearity property (group delay) of ± 178.5 ps across the whole band were obtained with a power consumption of 24 mW.
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U2 - 10.1109/LMWC.2010.2052593
DO - 10.1109/LMWC.2010.2052593
M3 - Article
AN - SCOPUS:77956395356
SN - 1531-1309
VL - 20
SP - 510
EP - 512
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 9
M1 - 5504002
ER -