An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon

Yuren Wang, Koichi Kakimoto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An in-situ observation on the crystal-melt interfaces, their propagations and dislocations during the melting of silicon was carried out by X-ray topography technique. The dislocation-free melting process was successfully observed through the optimization of temperature distribution in the furnace and the shape of the sample. The melting with and without dislocations near the melting zone was discussed. It was demonstrated that the crystal-melt interface was kept flat during the dislocation-free melting, while the interface was rough if an isolated dislocation appeared in the melting zone.

Original languageEnglish
Pages (from-to)143-146
Number of pages4
JournalMicroelectronic Engineering
Volume56
Issue number1-2
DOIs
Publication statusPublished - May 1 2001

Fingerprint

crystal dislocations
Silicon
Dislocations (crystals)
Topography
topography
Melting
melting
Zone melting
X rays
silicon
zone melting
x rays
Crystals
Furnaces
Temperature distribution
crystals
furnaces
temperature distribution
optimization
propagation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon. / Wang, Yuren; Kakimoto, Koichi.

In: Microelectronic Engineering, Vol. 56, No. 1-2, 01.05.2001, p. 143-146.

Research output: Contribution to journalArticle

@article{d42b75aeee194b53858785852d4ff72c,
title = "An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon",
abstract = "An in-situ observation on the crystal-melt interfaces, their propagations and dislocations during the melting of silicon was carried out by X-ray topography technique. The dislocation-free melting process was successfully observed through the optimization of temperature distribution in the furnace and the shape of the sample. The melting with and without dislocations near the melting zone was discussed. It was demonstrated that the crystal-melt interface was kept flat during the dislocation-free melting, while the interface was rough if an isolated dislocation appeared in the melting zone.",
author = "Yuren Wang and Koichi Kakimoto",
year = "2001",
month = "5",
day = "1",
doi = "10.1016/S0167-9317(00)00517-7",
language = "English",
volume = "56",
pages = "143--146",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon

AU - Wang, Yuren

AU - Kakimoto, Koichi

PY - 2001/5/1

Y1 - 2001/5/1

N2 - An in-situ observation on the crystal-melt interfaces, their propagations and dislocations during the melting of silicon was carried out by X-ray topography technique. The dislocation-free melting process was successfully observed through the optimization of temperature distribution in the furnace and the shape of the sample. The melting with and without dislocations near the melting zone was discussed. It was demonstrated that the crystal-melt interface was kept flat during the dislocation-free melting, while the interface was rough if an isolated dislocation appeared in the melting zone.

AB - An in-situ observation on the crystal-melt interfaces, their propagations and dislocations during the melting of silicon was carried out by X-ray topography technique. The dislocation-free melting process was successfully observed through the optimization of temperature distribution in the furnace and the shape of the sample. The melting with and without dislocations near the melting zone was discussed. It was demonstrated that the crystal-melt interface was kept flat during the dislocation-free melting, while the interface was rough if an isolated dislocation appeared in the melting zone.

UR - http://www.scopus.com/inward/record.url?scp=0035341730&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035341730&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(00)00517-7

DO - 10.1016/S0167-9317(00)00517-7

M3 - Article

AN - SCOPUS:0035341730

VL - 56

SP - 143

EP - 146

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-2

ER -