Abstract
An in-situ observation on the crystal-melt interfaces, their propagations and dislocations during the melting of silicon was carried out by X-ray topography technique. The dislocation-free melting process was successfully observed through the optimization of temperature distribution in the furnace and the shape of the sample. The melting with and without dislocations near the melting zone was discussed. It was demonstrated that the crystal-melt interface was kept flat during the dislocation-free melting, while the interface was rough if an isolated dislocation appeared in the melting zone.
| Original language | English |
|---|---|
| Pages (from-to) | 143-146 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 56 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - May 1 2001 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon. / Wang, Yuren; Kakimoto, Koichi.
In: Microelectronic Engineering, Vol. 56, No. 1-2, 01.05.2001, p. 143-146.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon
AU - Wang, Yuren
AU - Kakimoto, Koichi
PY - 2001/5/1
Y1 - 2001/5/1
N2 - An in-situ observation on the crystal-melt interfaces, their propagations and dislocations during the melting of silicon was carried out by X-ray topography technique. The dislocation-free melting process was successfully observed through the optimization of temperature distribution in the furnace and the shape of the sample. The melting with and without dislocations near the melting zone was discussed. It was demonstrated that the crystal-melt interface was kept flat during the dislocation-free melting, while the interface was rough if an isolated dislocation appeared in the melting zone.
AB - An in-situ observation on the crystal-melt interfaces, their propagations and dislocations during the melting of silicon was carried out by X-ray topography technique. The dislocation-free melting process was successfully observed through the optimization of temperature distribution in the furnace and the shape of the sample. The melting with and without dislocations near the melting zone was discussed. It was demonstrated that the crystal-melt interface was kept flat during the dislocation-free melting, while the interface was rough if an isolated dislocation appeared in the melting zone.
UR - http://www.scopus.com/inward/record.url?scp=0035341730&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035341730&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(00)00517-7
DO - 10.1016/S0167-9317(00)00517-7
M3 - Article
AN - SCOPUS:0035341730
VL - 56
SP - 143
EP - 146
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 1-2
ER -