An investigation of excess noise in transition-edge sensors on a solid silicon substrate

S. G. Crowder, M. A. Lindeman, M. B. Anderson, S. R. Bandler, N. Bilgri, M. P. Bruijn, J. Chervenak, E. Figueroa-Feliciano, F. Finkbeiner, A. Germeau, H. F.C. Hoevers, Naoko Iyomoto, R. Kelly, C. A. Kilbourne, T. Lai, J. Man, D. McCammon, K. L. Nelms, F. S. Porter, L. RocksT. Saab, J. Sadleir, G. Vidugiris

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Transition-edge sensors (TESs) exhibit two major types of excess noise above the expected and unavoidable thermodynamic fluctuation noise (TFN) to the heat sink and Johnson noise. High-resistance TESs such as those made by the Netherlands Institute for Space Research (SRON) show excess noise consistent with internal TFN (ITFN) caused by random energy transport within the TES itself while low resistance TESs show an excess voltage noise of unknown origin seemingly unrelated to temperature fluctuations. Running a high-resistance TES on a high thermal conductivity substrate should suppress ITFN and allow detection of any excess voltage noise. We tested two TESs on a solid silicon substrate fabricated by SRON of a relatively high normal state resistance of ∼200 mΩ. After determining a linear model of the TES response to noise for the devices, we found little excess TFN and little excess voltage noise for bias currents of up to ∼20 μA.

Original languageEnglish
Pages (from-to)721-723
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number2
Publication statusPublished - Apr 14 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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