An N2-compatible Ni0 metal-organic chemical vapor deposition (MOCVD) precursor

Viet Ha Tran, Takeshi Yatabe, Takahiro Matsumoto, Hidetaka Nakai, Kazuharu Suzuki, Takao Enomoto, Seiji Ogo

Research output: Contribution to journalArticle

Abstract

We report the first example of a Ni0 precursor that provides a contamination-free (<1%) nickel film by metal-organic chemical vapor deposition (MOCVD) using N2 as the carrier gas. The structure and physical properties of the Ni0 precursor and subsequent film are described.

Original languageEnglish
Pages (from-to)794-796
Number of pages3
JournalChemistry Letters
Volume44
Issue number6
DOIs
Publication statusPublished - Jan 1 2015

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Organic Chemicals
Chemical vapor deposition
Metals
Nickel
Contamination
Physical properties
Gases

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

An N2-compatible Ni0 metal-organic chemical vapor deposition (MOCVD) precursor. / Tran, Viet Ha; Yatabe, Takeshi; Matsumoto, Takahiro; Nakai, Hidetaka; Suzuki, Kazuharu; Enomoto, Takao; Ogo, Seiji.

In: Chemistry Letters, Vol. 44, No. 6, 01.01.2015, p. 794-796.

Research output: Contribution to journalArticle

Tran, Viet Ha ; Yatabe, Takeshi ; Matsumoto, Takahiro ; Nakai, Hidetaka ; Suzuki, Kazuharu ; Enomoto, Takao ; Ogo, Seiji. / An N2-compatible Ni0 metal-organic chemical vapor deposition (MOCVD) precursor. In: Chemistry Letters. 2015 ; Vol. 44, No. 6. pp. 794-796.
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