An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes

M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report an Ohmic contact process using TiSi2 electrodes for contact metals on AlGaN/GaN structures. TiSi2 films have been formed by cyclic deposition of Ti and Si layers by sputtering and annealing. Cross-sectional TEM image of the sample annealed has revealed a formation of an interfacial layer above AlGaN layer, however, no intrusion of Ti or Si atoms has been observed at dislocation. Specific contact resistance on annealing time showed gradual reduction with longer time. Therefore, TiSi2 can be a candidate as a contact material for AlGaN/GaN structures independent to dislocation density of epiwafers.

Original languageEnglish
Title of host publication1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
Pages159-161
Number of pages3
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Columbus, OH, United States
Duration: Oct 27 2013Oct 29 2013

Publication series

Name1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

Other

Other1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
CountryUnited States
CityColumbus, OH
Period10/27/1310/29/13

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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  • Cite this

    Okamoto, M., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Iwai, H., & Saito, W. (2013). An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes. In 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings (pp. 159-161). [6695586] (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings). https://doi.org/10.1109/WiPDA.2013.6695586