An organic nonvolatile memory using space charge polarization of a gate dielectric

Kodai Konno, Heisuke Sakai, Toshinori Matsushima, Hideyuki Murata

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We realize a nonvolatile and rewritable memory effect in an organic field-effect transistor (OFET) structure using polymethylmethacryrate (PMMA) dispersed with 10-methyl-9-phenylacridinium perchlorate (MPA+ClO4-) as a gate dielectric. Applying a voltage between a top source-drain electrode and a bottom gate electrode induces electrophoresis of two ions of MPA+ and ClO4- towards the corresponding electrodes in the memory devices. The drain currents of the memory devices markedly increase from 10- 9 A to 10- 2 A under no gate voltage condition due to the strong space charge polarization effect. Our memory devices have excellent electrical bistability and retention characteristics, i.e. the memory on/off ratio reached 107 and the drain current maintained 40% of the initial value after 104 s.

Original languageEnglish
Pages (from-to)534-536
Number of pages3
JournalThin Solid Films
Issue number2
Publication statusPublished - Nov 30 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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