An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Akira Nakajima, Sin Ichi Nishizawa, Shunsuke Kubota, Rei Kayanuma, Kazuo Tsutsui, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.

Original languageEnglish
Title of host publication2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984947
DOIs
Publication statusPublished - Oct 30 2015
Externally publishedYes
Event37th IEEE International Symposium on Workload Characterization, IISWC 2015 - New Orleans, United States
Duration: Oct 11 2015Oct 14 2015

Publication series

Name2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

Other

Other37th IEEE International Symposium on Workload Characterization, IISWC 2015
CountryUnited States
CityNew Orleans
Period10/11/1510/14/15

Fingerprint

Power integrated circuits
Monolithic integrated circuits
Polarization
Transistors
Electron gas
Gases
Heterojunctions
Diodes
Temperature
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Networks and Communications
  • Electronic, Optical and Magnetic Materials

Cite this

Nakajima, A., Nishizawa, S. I., Kubota, S., Kayanuma, R., Tsutsui, K., Ohashi, H., ... Iwai, H. (2015). An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. In 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015 [7314489] (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2015.7314489

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. / Nakajima, Akira; Nishizawa, Sin Ichi; Kubota, Shunsuke; Kayanuma, Rei; Tsutsui, Kazuo; Ohashi, Hiromichi; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Iwai, Hiroshi.

2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7314489 (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakajima, A, Nishizawa, SI, Kubota, S, Kayanuma, R, Tsutsui, K, Ohashi, H, Kakushima, K, Wakabayashi, H & Iwai, H 2015, An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. in 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015., 7314489, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015, Institute of Electrical and Electronics Engineers Inc., 37th IEEE International Symposium on Workload Characterization, IISWC 2015, New Orleans, United States, 10/11/15. https://doi.org/10.1109/CSICS.2015.7314489
Nakajima A, Nishizawa SI, Kubota S, Kayanuma R, Tsutsui K, Ohashi H et al. An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. In 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7314489. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015). https://doi.org/10.1109/CSICS.2015.7314489
Nakajima, Akira ; Nishizawa, Sin Ichi ; Kubota, Shunsuke ; Kayanuma, Rei ; Tsutsui, Kazuo ; Ohashi, Hiromichi ; Kakushima, Kuniyuki ; Wakabayashi, Hitoshi ; Iwai, Hiroshi. / An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).
@inproceedings{0b84712bc9714e50a68540391816abec,
title = "An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform",
abstract = "This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.",
author = "Akira Nakajima and Nishizawa, {Sin Ichi} and Shunsuke Kubota and Rei Kayanuma and Kazuo Tsutsui and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai",
year = "2015",
month = "10",
day = "30",
doi = "10.1109/CSICS.2015.7314489",
language = "English",
series = "2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015",
address = "United States",

}

TY - GEN

T1 - An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

AU - Nakajima, Akira

AU - Nishizawa, Sin Ichi

AU - Kubota, Shunsuke

AU - Kayanuma, Rei

AU - Tsutsui, Kazuo

AU - Ohashi, Hiromichi

AU - Kakushima, Kuniyuki

AU - Wakabayashi, Hitoshi

AU - Iwai, Hiroshi

PY - 2015/10/30

Y1 - 2015/10/30

N2 - This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.

AB - This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.

UR - http://www.scopus.com/inward/record.url?scp=84962222561&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84962222561&partnerID=8YFLogxK

U2 - 10.1109/CSICS.2015.7314489

DO - 10.1109/CSICS.2015.7314489

M3 - Conference contribution

AN - SCOPUS:84962222561

T3 - 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

BT - 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -