An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Akira Nakajima, Sin Ichi Nishizawa, Shunsuke Kubota, Rei Kayanuma, Kazuo Tsutsui, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.

Original languageEnglish
Title of host publication2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984947
DOIs
Publication statusPublished - Oct 30 2015
Externally publishedYes
Event37th IEEE International Symposium on Workload Characterization, IISWC 2015 - New Orleans, United States
Duration: Oct 11 2015Oct 14 2015

Publication series

Name2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

Other

Other37th IEEE International Symposium on Workload Characterization, IISWC 2015
CountryUnited States
CityNew Orleans
Period10/11/1510/14/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Networks and Communications
  • Electronic, Optical and Magnetic Materials

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