An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Akira Nakajima; Sin Ichi Nishizawa; Shunsuke Kubota; Rei Kayanuma; Kazuo Tsutsui; Hiromichi Ohashi; Kuniyuki Kakushima; Hitoshi Wakabayashi; Hiroshi Iwai

doi:10.1109/CSICS.2015.7314489

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Akira Nakajima, Sin Ichi Nishizawa, Shunsuke Kubota, Rei Kayanuma, Kazuo Tsutsui, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.

Original language	English
Title of host publication	2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479984947
DOIs	https://doi.org/10.1109/CSICS.2015.7314489
Publication status	Published - Oct 30 2015
Externally published	Yes
Event	37th IEEE International Symposium on Workload Characterization, IISWC 2015 - New Orleans, United States Duration: Oct 11 2015 → Oct 14 2015

Publication series

Name	2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

Other

Other	37th IEEE International Symposium on Workload Characterization, IISWC 2015
Country/Territory	United States
City	New Orleans
Period	10/11/15 → 10/14/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Networks and Communications
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/CSICS.2015.7314489

Cite this

Nakajima, A., Nishizawa, S. I., Kubota, S., Kayanuma, R., Tsutsui, K., Ohashi, H., Kakushima, K., Wakabayashi, H., & Iwai, H. (2015). An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. In 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015 [7314489] (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2015.7314489

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. / Nakajima, Akira; Nishizawa, Sin Ichi; Kubota, Shunsuke et al.

2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7314489 (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakajima, A, Nishizawa, SI, Kubota, S, Kayanuma, R, Tsutsui, K, Ohashi, H, Kakushima, K, Wakabayashi, H & Iwai, H 2015, An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. in 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015., 7314489, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015, Institute of Electrical and Electronics Engineers Inc., 37th IEEE International Symposium on Workload Characterization, IISWC 2015, New Orleans, United States, 10/11/15. https://doi.org/10.1109/CSICS.2015.7314489

Nakajima A, Nishizawa SI, Kubota S, Kayanuma R, Tsutsui K, Ohashi H et al. An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. In 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7314489. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015). doi: 10.1109/CSICS.2015.7314489

Nakajima, Akira ; Nishizawa, Sin Ichi ; Kubota, Shunsuke et al. / An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform. 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

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abstract = "This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.",

author = "Akira Nakajima and Nishizawa, {Sin Ichi} and Shunsuke Kubota and Rei Kayanuma and Kazuo Tsutsui and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai",

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AU - Tsutsui, Kazuo

AU - Ohashi, Hiromichi

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AB - This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.

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An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

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