TY - JOUR
T1 - Analysis and Implementation of High-Q CT Inductor for Compact and Wide- Tuning Range Ku-Band VCO
AU - Mansour, Islam
AU - Aboualalaa, Mohamed
AU - Barakat, Adel
AU - Allam, Ahmed
AU - Abdel-Rahman, Adel B.
AU - Abo-Zahhad, Mohammed
AU - Pokharel, Ramesh K.
N1 - Publisher Copyright:
© 2001-2012 IEEE.
PY - 2020/8
Y1 - 2020/8
N2 - This work presents a new structure of center tap (CT) inductor to improve the performance of Ku-band voltage-controlled oscillators (VCOs). Conventional CT inductor provided by the foundry suffers from a poor-quality ( Q -) factor large area and low self-resonance frequency. These problems are solved by introducing a coupling structure. For the proposed CT inductor, despite its size is miniaturized by 51%, the Q -factor is increased by 41% in the frequency range of 5-30 GHz compared to a conventional CT inductor. The measured differential inductance and quality factor of the proposed inductor are 385 pH and 22 at 12 GHz. The proposed CT inductor is used to design a compact and wide-tuning-range VCO at Ku-band in 0.18- \mu \text{m} complementary metal-oxide-semiconductor (CMOS) technology, and this leads to 5.8 dB phase noise improvement compared to the use of a conventional CT inductor. The fabricated VCO has a compact core size of 140 \mu \text{m}\,\,\times400\,\,\mu \text{m} only. The VCO chip oscillates from 11.7 to 13.7 GHz. The measured phase noise is -107.7 dBc/Hz at 1-MHz offset frequency at a carrier frequency of 13.7 GHz, and the dc power consumption of the VCO core is 4 mW which results in a figure of merit (FoM) normalized to the die area (FoM _{\mathrm {A}} ) to be -197 dBc/Hz.
AB - This work presents a new structure of center tap (CT) inductor to improve the performance of Ku-band voltage-controlled oscillators (VCOs). Conventional CT inductor provided by the foundry suffers from a poor-quality ( Q -) factor large area and low self-resonance frequency. These problems are solved by introducing a coupling structure. For the proposed CT inductor, despite its size is miniaturized by 51%, the Q -factor is increased by 41% in the frequency range of 5-30 GHz compared to a conventional CT inductor. The measured differential inductance and quality factor of the proposed inductor are 385 pH and 22 at 12 GHz. The proposed CT inductor is used to design a compact and wide-tuning-range VCO at Ku-band in 0.18- \mu \text{m} complementary metal-oxide-semiconductor (CMOS) technology, and this leads to 5.8 dB phase noise improvement compared to the use of a conventional CT inductor. The fabricated VCO has a compact core size of 140 \mu \text{m}\,\,\times400\,\,\mu \text{m} only. The VCO chip oscillates from 11.7 to 13.7 GHz. The measured phase noise is -107.7 dBc/Hz at 1-MHz offset frequency at a carrier frequency of 13.7 GHz, and the dc power consumption of the VCO core is 4 mW which results in a figure of merit (FoM) normalized to the die area (FoM _{\mathrm {A}} ) to be -197 dBc/Hz.
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U2 - 10.1109/LMWC.2020.3004753
DO - 10.1109/LMWC.2020.3004753
M3 - Article
AN - SCOPUS:85089515464
SN - 1531-1309
VL - 30
SP - 802
EP - 805
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 8
M1 - 9134404
ER -