Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Takuya Hoshii, Akira Nakajima, Shinichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui

Research output: Contribution to journalArticle

Abstract

GaN-based p-channel devices using a two-dimensional hole gas are of interest for the realization of GaN CMOS circuits, and threshold voltage control using a back-gate is useful for the circuit design of these devices. In this paper, the back-gate effect on p-channel GaN MOSFETs on polarization-junction substrates is studied. The results show that the obtained dependence of the threshold voltage on the back-gate voltage can be derived by a model equation considering the back surface channel. Also, by comparing the measured characteristics with the simulation result under ideal conditions, it is found that the amount of interfacial charges can be quantitatively evaluated for the fabricated device.

Original languageEnglish
Article number061006
JournalJapanese Journal of Applied Physics
Volume58
Issue number6
DOIs
Publication statusPublished - Jan 1 2019

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Threshold voltage
threshold voltage
field effect transistors
Polarization
Networks (circuits)
Substrates
polarization
Voltage control
CMOS
Electric potential
Gases
electric potential
gases
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates. / Hoshii, Takuya; Nakajima, Akira; Nishizawa, Shinichi; Ohashi, Hiromichi; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo.

In: Japanese Journal of Applied Physics, Vol. 58, No. 6, 061006, 01.01.2019.

Research output: Contribution to journalArticle

Hoshii, Takuya ; Nakajima, Akira ; Nishizawa, Shinichi ; Ohashi, Hiromichi ; Kakushima, Kuniyuki ; Wakabayashi, Hitoshi ; Tsutsui, Kazuo. / Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates. In: Japanese Journal of Applied Physics. 2019 ; Vol. 58, No. 6.
@article{a2aba430b0af45ca88c469737b5bc6e2,
title = "Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates",
abstract = "GaN-based p-channel devices using a two-dimensional hole gas are of interest for the realization of GaN CMOS circuits, and threshold voltage control using a back-gate is useful for the circuit design of these devices. In this paper, the back-gate effect on p-channel GaN MOSFETs on polarization-junction substrates is studied. The results show that the obtained dependence of the threshold voltage on the back-gate voltage can be derived by a model equation considering the back surface channel. Also, by comparing the measured characteristics with the simulation result under ideal conditions, it is found that the amount of interfacial charges can be quantitatively evaluated for the fabricated device.",
author = "Takuya Hoshii and Akira Nakajima and Shinichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui",
year = "2019",
month = "1",
day = "1",
doi = "10.7567/1347-4065/ab1c78",
language = "English",
volume = "58",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "6",

}

TY - JOUR

T1 - Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

AU - Hoshii, Takuya

AU - Nakajima, Akira

AU - Nishizawa, Shinichi

AU - Ohashi, Hiromichi

AU - Kakushima, Kuniyuki

AU - Wakabayashi, Hitoshi

AU - Tsutsui, Kazuo

PY - 2019/1/1

Y1 - 2019/1/1

N2 - GaN-based p-channel devices using a two-dimensional hole gas are of interest for the realization of GaN CMOS circuits, and threshold voltage control using a back-gate is useful for the circuit design of these devices. In this paper, the back-gate effect on p-channel GaN MOSFETs on polarization-junction substrates is studied. The results show that the obtained dependence of the threshold voltage on the back-gate voltage can be derived by a model equation considering the back surface channel. Also, by comparing the measured characteristics with the simulation result under ideal conditions, it is found that the amount of interfacial charges can be quantitatively evaluated for the fabricated device.

AB - GaN-based p-channel devices using a two-dimensional hole gas are of interest for the realization of GaN CMOS circuits, and threshold voltage control using a back-gate is useful for the circuit design of these devices. In this paper, the back-gate effect on p-channel GaN MOSFETs on polarization-junction substrates is studied. The results show that the obtained dependence of the threshold voltage on the back-gate voltage can be derived by a model equation considering the back surface channel. Also, by comparing the measured characteristics with the simulation result under ideal conditions, it is found that the amount of interfacial charges can be quantitatively evaluated for the fabricated device.

UR - http://www.scopus.com/inward/record.url?scp=85070772503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070772503&partnerID=8YFLogxK

U2 - 10.7567/1347-4065/ab1c78

DO - 10.7567/1347-4065/ab1c78

M3 - Article

AN - SCOPUS:85070772503

VL - 58

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6

M1 - 061006

ER -