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Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates
Takuya Hoshii, Akira Nakajima, Shin Ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui
Research output: Contribution to journal › Article › peer-review