Analysis of charge deposition and collection caused by low energy neutrons in a 25-nm bulk cmos technology

Shin Ichiro Abe, Yukinobu Watanabe

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n,p) and ({\rm n}, \alpha) reactions although the production cross sections for H and He ions are smaller than the elastic scattering cross sections below 20 MeV. The SEUs induced by secondary H and He ions are influenced strongly by the size of the interaction volume considered in the simulation because the ranges of H and He ions are much longer than those of elastic recoils.

Original languageEnglish
Article number6975251
Pages (from-to)3519-3526
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number6
DOIs
Publication statusPublished - Dec 1 2014

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single event upsets
Neutrons
neutrons
Ions
ions
Elastic scattering
energy
scattering cross sections
elastic scattering
simulation
thresholds
cross sections
interactions

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Analysis of charge deposition and collection caused by low energy neutrons in a 25-nm bulk cmos technology. / Abe, Shin Ichiro; Watanabe, Yukinobu.

In: IEEE Transactions on Nuclear Science, Vol. 61, No. 6, 6975251, 01.12.2014, p. 3519-3526.

Research output: Contribution to journalArticle

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