TY - JOUR
T1 - Analysis of compositional instability of InGaN by Monte Carlo simulation
AU - Kangawa, Yoshihiro
AU - Kakimoto, Koichi
AU - Ito, Tomonori
AU - Koukitu, Akinori
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/1
Y1 - 2007/1
N2 - Relationships between growth conditions and atomic arrangements in InGaN thin films were investigated by Monte Carlo simulation incorporating data obtained from thermodynamic analyses and empirical interatomic potential calculations. The results suggest that compositional fluctuation was enhanced during the site-exchanging process instead of the adsorption process in the case of low indium input partial pressure. Moreover, it was found that no gross fluctuation in composition occurs but atomic-sized clustering occurs in thin films. The results agree with the experimental results [Smeeton et al., Appl. Phys. Lett. 83 (2003) 5419].
AB - Relationships between growth conditions and atomic arrangements in InGaN thin films were investigated by Monte Carlo simulation incorporating data obtained from thermodynamic analyses and empirical interatomic potential calculations. The results suggest that compositional fluctuation was enhanced during the site-exchanging process instead of the adsorption process in the case of low indium input partial pressure. Moreover, it was found that no gross fluctuation in composition occurs but atomic-sized clustering occurs in thin films. The results agree with the experimental results [Smeeton et al., Appl. Phys. Lett. 83 (2003) 5419].
UR - http://www.scopus.com/inward/record.url?scp=33846442423&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846442423&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2006.10.017
DO - 10.1016/j.jcrysgro.2006.10.017
M3 - Article
AN - SCOPUS:33846442423
SN - 0022-0248
VL - 298
SP - 190
EP - 192
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - SPEC. ISS
ER -