Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions

Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jurgen Mattausch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

In this paper, we report a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)] including a capacitance model, which accurately captures the contributions originating from the device's field plate (FP) structure. The capabilities of the reported model are demonstrated by reproduction of the measured power efficiency of a boost converter circuit, enabled through separate extraction of the parasitic FP contributions. In addition, physical trap-density modeling is verified to be also of key importance for accurate prediction of the power efficiency.

Original languageEnglish
Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages267-270
Number of pages4
ISBN (Electronic)9781467387682
DOIs
Publication statusPublished - Jul 25 2016
Externally publishedYes
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: Jun 12 2016Jun 16 2016

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2016-July
ISSN (Print)1063-6854

Conference

Conference28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
CountryCzech Republic
CityPrague
Period6/12/166/16/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Mizoguchi, T., Naka, T., Tanimoto, Y., Okada, Y., Saito, W., Miura-Mattausch, M., & Mattausch, H. J. (2016). Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 267-270). [7520829] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520829