Analysis of GaN high electron mobility transistor switching characteristics for high-power applications with HiSIM-GaN compact model

Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jürgen Mattausch

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper presents a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)]. The developed model includes two specific features of GaN-HEMT to reproduce the power efficiency accurately. One is the two-dimensional electron gas induced at the heterojunction, which is modeled by considering the potential distribution across the junction including the trap density contribution. The second feature is the field plate, which is introduced to delocalize the electric-field peak that occurs at the electrode edge. Using HiSIM-GaN, device characteristics have been simulated. It is demonstrated that measured DC/AC characteristics are well reproduced with the developed model. The model has also been applied to analyze circuit characteristics of a boost converter. It is shown that the waveform is well reproduced by considering one half of the trap density extracted with measured DC characteristics due to the time constant of trap events. Furthermore, it is verified that the power efficiency as a function of the load current is predicted within an accuracy of 1%. Influence of the trap density and the field plate on circuit performances is also discussed.

Original languageEnglish
Article number04EG03
JournalJapanese Journal of Applied Physics
Volume55
Issue number4
DOIs
Publication statusPublished - Apr 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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